NAMBE2019 Tuesday Afternoon

Sessions | Time Periods | Topics | Schedule Overview

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Session Tuesday, September 24, 2019
1:30 PM 2:30 PM 3:30 PM 4:30 PM
MBE-1TuA
MBE Young Investigator Award Winner: TBD
Band Engineering to Achieve a Wide Band Gap Topological Insulator
Van der Waal Epitaxy of Bi2Se3 on GaAs: A Morphological Playground
Growth of GeTe and Sb2Te3 Interlayer Structures for Interfacial Phase Change Devices via Molecular Beam Epitaxy
Molecular Beam Epitaxy of Hexagonal Boron Nitride on HOPG
MBE-2TuA
InAs Chirped Quantum Dot Growth on Si for Broadband Spectral Gain Mode­-locked Laser
InP Quantum Dots for Dislocation-tolerant, Visible Light Emitters on Si
Gallium-assisted Deoxidation for Spatially and Spectrally Controlled InAs Quantum Dot Molecules
Influence of the Growth Conditions on the Performance of InAs Sub-Monolayer Quantum Dot Infrared Photodetectors
Effect of Annealing on Structure and Luminescence of InP/AlGaInP Quantum Dots
Structural and Optical Properties of GaAs(111)A Tensile-strained Quantum Dots using As2 and As4
Comparing the Self-assembly of Tensile-strained Ge and GaAs Quantum Dots on InAlAs(111)A
Sessions | Time Periods | Topics | Schedule Overview