ICMCTF2006 Session B3: CVD Coatings and Technologies
Time Period WeA Sessions | Abstract Timeline | Topic B Sessions | Time Periods | Topics | ICMCTF2006 Schedule
Start | Invited? | Item |
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1:30 PM |
B3-1 Chemical Vapor Deposition of Transition Metal Diborides from Single Source Precursors
Y. Yang, D.Y. Kim, J.E. Gerbi, G.S. Girolami, J.R. Abelson (University of Illinois at Urbana-Champaign) Transition metal diborides are metallic ceramic materials that have melting temperatures ~ 3000°C, hardnesses > 20 GPa and low electrical resistivities. However, they have been largely overlooked in thin film science and technology because of difficulties associated with conventional deposition methods. We recently developed a successful thermal CVD approach using impurity-free single source precursors; the resulting diboride coatings are extremely conformal, highly conductive, and super hard. We discuss the growth of HfB2 films from the precursor Hf(BH4)4. By employing line-of-sight mass spectrometry, and by analyzing the coating profiles on trench structures, we show that the growth kinetics follow a Langmuirian surface reaction mechanism. Using low growth temperature and high precursor pressure, 100% step coverage is achieved on trench structures with an aspect ratio of 20:1 (depth:width). At growth temperatures of 200-300°C, the films are X-ray amorphous with resistivity as low as 400µΩ-cm. The nanoindentation hardness of the as-deposited film is 20 GPa; annealing to 700°C for 30 minutes transforms the film into a nanocrystalline phase and raises the hardness to 40 GPa. The above attributes make the CVD growth of HfB2 films attractive for applications such as diffusion barriers for Cu metallization in microelectronics, and wear-resistant hard coatings. We will also report methods to tailor the film mechanical properties and to achieve super-conformality with the addition of a secondary flux. For example, we add atomic nitrogen from a remote plasma source to obtain ternary Hf-B-N thin films, which have lower hardness and elastic modulus than HfB2 film. By modulating the N2 flow, we grow binary-ternary multilayer films with precise control of layer thickness and periodicity. The hardness and elastic modulus of these nanolaminate structure can be fine tuned, e.g. to preserve high hardness while matching the elastic modulus of the substrate. |
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1:50 PM |
B3-2 Microwave Atmospheric Plasma Technology for Surface Treatment and Reactive Coating on Steel Surfaces
R. Peelamedu, D. Kumar, S. Kumar (Dana Corporation) Materials coating using atmospheric pressure plasma may have several advantages such as absence of vacuum, rapid process time, high deposition rates, high ion impingment density etc. In this talk, the possibility of using atmospheric plasma technology for various coating applications will be discussed. The rapidity in growth rate for high temperature conversion oxide coating in the case of Ni-Cu will be highlighted. Controlled deposition of dense silicon oxynitride coatings on p-type silicon wafers were also achieved using this process. The SEM analysis reveal a dense, submicron sized particulates, distributed uniformly on the wafer surface. The discussion will also include results obtained by using atmospheric pressure plasma for chemical vapor deposition (CVD). Using this, coatings such as Si, TiN and DLC coatings on steel substrates have been attempted. |
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2:10 PM |
B3-3 High Temperature Processing of Poly-SiC Substrates from the Vapor Phase for Wafer-Bonding
M. Pons (INP Grenoble, France) The transfer by wafer-bonding of single-crystalline SiC thin films to a polycrystalline SiC support to obtain a "quasi-wafer" is an attractive alternative source. The generic nature of the Smart-Cut process (SOITEC Company), based on ion implantation and wafer bonding is now recognized through successful demonstrations of Si, III-V and SiC thin film transfers. Currently, 3C-SiC CVD wafers, with a fine grain structure (grain size around 5µm) and highly textured, are used. However, it is difficult to use the Chemical "Mechanical" Polishing technique (Epi-Ready process of NOVASiC) to obtain surfaces with a very low roughness as for single crystals. In the literature, there is no systematic study of high temperature and high growth rate (> 100 µm/h) processing of polycrystalline SiC by vapor deposition. In this paper, the evaluation and polishing of large poly-SiC grains processed by the classical PVT technique and the novel CF-PVT one at high growth rate were investigated with the aim to fabricate low roughness (< 5 nm) and low bow (> 3 µm) substrates able to fulfill the constraints of wafer bounding. For this preliminary research study, 2" substrates were processed. |
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2:30 PM |
B3-4 TiN/SiNx Multilayer Coatings by Chemical Vapor Deposition in a Fluidized Bed Reactor at Atmospheric Pressure (AP/FBR-CVD)
J. Perez-Mariano, C. Colominas (Universitat Ramon Llull, Spain) Titanium nitride (TiN) coatings have been extensively used for tribological applications, corrosion protection, decoration, biomaterials, etc. However, for certain applications the properties of single TiN coatings must be improved; generally the hardness and the adhesion to the substrate need to be increased and the coating porosity reduced. Among other strategies, this can be done by the synthesis of multilayered coatings in which the TiN layers alternate with metal layers, or by the formation of nanocomposite coatings where a phase of TiN is combined with other nitride phases (for example, AlN or SiNx). In this work we have studied the synthesis of TiN/SiNx multilayer coatings by Chemical Vapor Deposition in a Fluidized Bed Reactor at Atmospheric Pressure (AP/FBR-CVD). It is well known that the good heat and mass transfer of the fluidized bed system yield very homogeneous coatings. Moreover, deposition of two immiscible phases such as TiN and SiNx is a good strategy to overcome limitations related to interdiffusion between the several layers. The coatings were deposited from TiCl4, SiCl4 and NH3 by AP/FBR CVD at 850°C. The relations between deposition conditions, coating substructure and mechanical properties are presented. |
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2:50 PM | Invited |
B3-5 Vapor Growth of SiC Bulk Crystals and its Challenge of Doping
P.J. Wellmann, R. Mueller, D. Queren, S.A. Sakwe (University of Erlangen, Germany); M. Pons (INP Grenoble, France) The wide bandgap semiconductor SiC which may be prepared by physical vapor transport (PVT) growth at elevated temperatures above 2300K has gained much interest in resent years for high power, high frequency, high temperature and sensor applications in harsh environments. High and homogeneous doping of the single crystal substrates is a prerequisite to ensure reliable device operation and great device fabrication yield. The paper reviews the so called Modified-PVT (M-PVT) technique which combines the state of the art PVT technique for SiC crystal growth with physical and chemical vapor deposition (PVD and CVD) for fine tuning of growth parameters and improved doping. Using this technique, currently the highest aluminum doping levels and lowest resistivity values in p-type SiC were achieved that for the first time meet device fabrication needs. The paper will address three issues: (i) The development of the Modified-PVT technique will be described with emphasis on the benefit of the additional gas pipe that allows the direct control of gas phase composition. Numerical modeling of the impact of the additional gas flow on the conventional PVT sublimation process will presented. (ii) As additional gas, feeding of (a) inert gas helium, (b) helium-aluminum vapor for p-type doping, (c) phosphine for n-type doping and propane for fine tuning of the gas phase composition, i.e. intention to the control C/Si ratio, will be presented. So far, the M-PVT concept, i.e. mixture of PVT and fine tuning by PVD/CVD, enables the most flexible doping of SiC single crystals. (iii) Fundamentals of doping incorporation which are related to the growth of the various 4H- and 6H-SiC polytypes will be explained to evaluate doping limitations in SiC. Finally, possible mechanisms will be discussed that explain recent results of a reduced occurrence of basal plane dislocations in p-type SiC. The latter may become important in better controlling defect formation during bulk SiC crystal growth. |
3:30 PM |
B3-7 TEM Investigation of CVD TiN/κ Alumina Multilayer Coatings
S. Canovic, M. Halvarsson (Chalmers University of Technology, Sweden); S.A. Ruppi (Seco Tools AB, Sweden) Multilayer coatings of TiC, TiN and alumina are often formed on cemented carbide cutting tools by chemical vapour deposition (CVD) in order to increase the wear resistance of the tools. The thickness of the coatings is typically in the range of 3-10 µm. Two of the alumina polymorphs, alpha and kappa, are most commonly used in the multilayers. There is also a third alumina phase that is occasionally present in CVD coatings, gamma. This paper deals with the detailed microstructure of kappa alumina multilayers separated by thin intermediate TiN layers. Deposition of the experimental coatings was carried out in a computer-controlled hot-wall CVD reactor. Commercial cemented carbide inserts with a composition of 85.5 % WC and 5.5 % Co and 9 % cubic carbides were used as substrates. A 3 µm thick intermediate layer of Ti(C,N) was deposited directly onto the cemented carbide substrate, followed by a κ-bonding layer, which promotes nucleation and growth of the kappa phase. Then kappa alumina and TiN layers were deposited in sequence until the coatings were composed of 8 individual kappa alumina layers. The coatings were pre-examined by scanning electron microscopy (SEM) using a Leo Ultra 55 FEG. The main part of this work was carried out by transmission electron microscopy (TEM) using a Philips CM 200 FEG working at 200 kV. Cross-section TEM specimens of thin foils were prepared using a combined FIB (Focused Ion Beam)/SEM and standard ion milling. These methods produce electron transparency in all layers and interfaces, allowing all parts of the multilayer coating to be viewed simultaneously. The detailed microstructure, such as defects, twinning, grain size, porosity and epitaxy will be described. Special emphasis is put on the alumina/TiN interfacial structures and the occasional presence of porosity and gamma alumina. Comparisons with first-principles calculations of the interfacial structure will be made. |
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3:50 PM |
B3-8 CVD Deposition and Characterization of Coloured Al2O3/ZrO2 Multilayers
C. Bjormander (AB Sandvik Tooling, Sweden) Abstract: Coloured Al2O3/ZrO2multilayers have been deposited onto WC-Co based inserts by a CVD process. Through physical as well as optical analysis of such multilayers, colour is believed to originate from interference. The coatings are obtained with good process reproducibility. It was found that, the AlCl3 and ZrCl4 concentration profiles during a period of such a multilayer, has an impact on both the phase content, texture, morphology and therefore also on the observed colour of such multilayers. By mixing of AlCl3 and ZrCl4 at layer transition the ZrO2 was found to be composed of predominantly tetragonal ZrO2 phase whereas by having no mixing of AlCl3 and ZrCl4 at layer transition the ZrO2 was found to be composed of a mixture of tetragonal and monoclinic ZrO2 phase. It was also found that multilayers containing monoclinic ZrO2 phase seem to be less perfect with existence of larger grains of ZrO2 . Such grains are believed to scatter light and in this way alter the reflectance of such a multilayer. In addition to this, such multilayers were found to be free of or with greatly reduced amount of thermal cracks, normally present in pure CVD grown Al2O3 layers. |
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4:10 PM |
B3-9 Nanoindentation Hardness and Microstructure of CVD α-Al2O3 and -Al2O3 Coatings
S.A. Ruppi (Seco Tools AB, Sweden); A. Flink (Linköping University, Sweden) There are only few studies on mechanical properties of CVD Al2O3 coatings. Usually CVD α-Al2O3 and κ-Al2O3 coatings have been dealt with. However, the earlier studies have been performed on α-Al2O3, which was formed as a result of the κ - α phase transformation. This kind of α-Al2O3 layers were typically composed of relatively large, equiaxed grains with a high defect density. Modern CVD α-Al2O3 layers produced using controlled nucleation are typically composed of defect-free columnar grains with enhanced mechanical properties. In addition, the growth textures of modern Al2O3 coatings can be predetermined by optimised nucleation and growth processes. The following preferred growth directions have been reported: <012>, <104>, <110> and <300>. The aim of this study was to compare the mechanical properties of nucleated α-Al2O3 with κ-Al2O3 and transformed κ-Al2O3. For this purpose the following Al2O3 layers were deposited: a) κ-Al2O3 b) α-Al2O3 with random texture (transformed κ-Al2O3) c) Nucleated α-Al2O3 with <012> texture d) Nucleated α-Al2O3 with <104> texture e) Nucleated α-Al2O3 with <001> texture. The experimental coatings were deposited to thickness of about 8 µm and were investigated using XRD and SEM before hardness measurements were carried out. The hardness and modulus of the Al2O3layers were measured using nanoindentation technique. The indentations were performed on polished tapered cross-sections. All the nucleated α-Al2O3 layers showed superior mechanical properties (hardness and modulus) as compared with κ-Al2O3 and α-Al2O3, which was formed as a result of the phase transformation. The <001> textured α-Al2O3 coating exhibited the highest hardness and modulus. |
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4:30 PM |
B3-11 Aluminium Coating Modified with Hf on Ferritic Steels by CVD-FBR Technology
F.J. Bolívar, M.P. Hierro, J.A. Trilleros, M.C. Carpintero, F.J. Bolívar, F.J. Pérez (Universidad Complutense de Madrid, Spain) The aim of this study is to investigate the feasibility of modifying aluminium coating with small additions of hafnium (Hf) on ferritic steel (P-91, P-92) at temperatures below 600°C by Chemical Vapour Deposition by means of fluidized bed reactor (CVD-FBR), to increase the coating properties and their high temperature durability in oxidising and corrosive environments. Thermochemical calculations were made before the experimental study to investigate the conditions for the formation of gas precursor for deposition. This technique is based onthe reaction of the powder of aluminium (Al) and few amount of Hf with chloride of hydrogen (HCl) for the formation of gas precursor necessary for deposition of Al-coatings. These coatings were characterized by different techniques such as X-ray diffraction (XRD), optical microscopy (OM), Scanning Electron Microscopy (SEM) and Energy Dispersion Spectroscopy (EDS). The preliminary results obtained are discussed in this work. |
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4:50 PM |
B3-12 Al-Mn CVD-FBR Protective Coatings for Hot Corrosion Application
S. Tsipas, J.M. Brossard, M.P. Hierro, J.A. Trilleros, L. Sánchez, F.J. Bolívar, F.J. Pérez (Universidad Complutense de Madrid, Spain) Ferritic steels are usually used in boiler or supercritical steam turbines which operate at temperatures between 600-650°C under pressure. Protective coatings are often applied in order increase their oxidation resistance and protect them against degradation. In this study new Al-Mn protective coatings were deposited by CVD-FBR on three ferritic steels (P-91 and HCM-12 A). The initial process parameters were optimized by thermodynamic calculations using Thermo-Calc software. Then, those parameters were used in the experimental procedure to obtain Al-Mn coatings at low temperature and atmospheric pressure. Co-deposition was achieved at moderate temperatures in order to maintain the substrates` mechanical properties. The coatings` microstructure and phase constitution was characterized. Fe-Al intermetallics coatings containing Cr and Mn were obtained. The phase constitution is discussed with reference to the Fe-Al-Mn ternary phase diagram. The effect of diffusion heat treatment on the phase transformations as well as the oxidation resistance of these coatings was investigated. |
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5:10 PM |
B3-13 Mechanical Stresses in Catalytic Chemically Vapour Deposited Polycrystalline Silicon Films
G.E. Ayvazyan, A.H. Vardanyan, A.V. Aghabekyan (Engineering Academy of Armenia) Catalytic chemically vapour deposited (Cat-CVD) is now becoming a mature technique in the field of thin silicon (Si) film deposition. In Cat-CVD, Si deposition takes place upon catalytic decomposition of the reactant gases at the surface of a hot filament heated at temperatures in the range of 1500-2000°C. In this study, we present mechanical stress evolution of Cat-CVD polycrystalline Si films during post-deposition thermal cycling. Polycrystalline Si films were deposited into oxidized monocrystalline silicon wafers by Cat-CVD in an ultra-high vacuum multichamber deposition system by optimizing the gas pressure, flow rate and filament temperature. Mechanical stresses in films were evaluated from the measured curvature change using the Stoney equation. In situ wafer curvature was measured between room temperature and 530°C using a laser interferometer with an external thermo-chamber. The overall mechanical stress state is determined by the superposition of two primary effects. The intrinsic (athermal) stress is generated during the deposition and is strongly related to the process parameters. The thermal stress only results from the temperature change between deposition and characterization and the difference in thermal expansion coefficients of the film and the wafer. It is found that the Cat-CVD polycrystalline Si film stresses strongly depend on the processing history and thermal stresses annihilation are identified as the major mechanisms to control the mechanical behaviour of the films. The dependence of residual stress on temperature is non-linear with significant hysteresis. This hysteresis reduced significantly during the subsequent thermal cycle. Thermal cycling is shown to result in major plastic deformation of the film and a switch from a compressive to a tensile state of stress; both athermal and thermal components of the net stress alter in different ways during cycling. |