ICMCTF1999 Session F3: Surface and Thin Film Analysis

Monday, April 12, 1999 8:30 AM in Room San Diego

Monday Morning

Start	Invited?	Item
10:30 AM	Invited	F3-7 Quantitative and Non-Destructive Materials Characterization Using Ion Beams: Applications to Thin Films W. Lennard, I.V. Mitchell (The University of Western Ontario, Canada); G.R. Massoumi (The University of Western Ontario) The use of MeV light ion beams as a probe of the composition and structure of thin films is described. The techniques of elastic scattering (RBS, including the use of heavy ions), elastic recoil detection (ERD), nuclear reaction analysis (NRA) and particle-induced X-ray excitation (PIXE) as they relate to quantitative non-destructive materials analyses will be emphasized. The talk will feature examples of results obtained for a variety of materials: (metals, semiconductors, dielectrics) e.g. TiNx, TaOx, DLC, SiNxOy. The depth profiling capabilities of ion beam analysis are presented. By contrast, electron spectroscopies are rarely quantitative and the differences between ion and electron excitation will be elucidated.
11:10 AM		F3-9 Characterization Of SiO_xN_y Antireflective Coatings Using SIMS And RBS A.A. Saleh, J.B. Rothman, J.F. Kirchhoff (Charles Evans and Associates); J. Yota, C. Nguyen (Rockwell Semiconductor) Silicon oxynitride films formed using low-temperature plasma-enhanced chemical vapor deposition (PECVD) are being investigated for antireflective coatings (ARC) for deep ultraviolet (DUV) photolithography. SiO_xN_y films reduce undesirable substrate reflections by phase-shift cancellation that is dependent on the film composition, refractive index, extinction coefficient and film thickness. Several SiO_xN_y films, 100-300 Å thick, were deposited on p-type (100) Si and analyzed with Rutherford backscattering spectrometry (RBS), hydrogen forward scattering (HFS) and secondary ion mass spectroscopy (SIMS). The combined results were used to determine detailed and quantitative depth profiles that combine the inherent sensitivity and depth resolution of SIMS with the quantitative capacity of RBS and HFS. This multiple technique approach overcomes the weaknesses of each technique and provides a higher level of quantification and reproducibility than either technique alone.
11:30 AM		F3-10 The Effect of PVD-Coating-Constitution on Surface Free Energy E. Lugscheider, K. Bobzin, M. Möller (Lehr- und Forschungsgebiet Werkstoffwissenschaften - RWTH-Aachen, Germany) PVD-coatings in the systems of Ti-N, Zr-C-N, Hf-C-N and Al-O-N were examined by using the dynamic contact angle analysis. The contact angles were measured by the sessile drop technique using five liquids with known surface free energy characteristics as derived from the literature. By this and according to the Owens-Wendt equation the surface free energy could be calculated. The surface free energy of solids is a characteristic factor which affects the surface properties and interfacial interactions such as adsorption, wetting, adhesion etc. Therefore the surface free energy is of interest in the field or adhesive technologies, biomedical applications, cleaning procedures or for the wettability of tribological systems. One method of determining the polar and dispersive terms of the free surface energies of solids is based on measurements of the contact angles of pure liquids on solid surfaces. Within this paper the use of dynamic contact angle analysis for the evaluation of surface tension is described. The influences of chemical composition as well as macro- and microstucture on contact angles and surface tension were investigated. Series of coating systems with increasing contents of N, C and O were deposited and analysed. Differences in surface roughness were realized by different substrate preparation techniques like grinding, grid blasting or polishing. The surface morphology of the PVD-coatings was examined by scanning electron microscopy and X-Ray reflectivity while the chemical composition was qualified by electron probe micro analysis.
11:50 AM		F3-11 XPS Analyses of TiN Films on Cu Substrates after Annealing in the Controlled Atmosphere F.-H. Lu, H.-Y. Chen (National Chung Hsing University, Taiwan, R.O.C.) X-ray photoelectron spectroscopy (XPS) has been used to investigate the thermal annealing of TiN films on Cu substrates in the controlled atmosphere. The films were prepared by the cathodic arc plasma deposition technique. Thin amorphous TiO₂ as well as the TiN_xO_y layer was identified on the surface of as-deposited TiN samples. Analyzing the depth profiles by using XPS from Ti 2p, N 1s, and O 1s spectra together with Auger electron spectroscopy showed the uniform composition and structure of the TiN samples. The following gases used in the annealing were air, N₂, Ar, N₂/H₂ mixed gases, etc. Annealing the samples in air for 2 hrs at 300 °C, 400 °C, and 500 °C resulted in the gradual transformation from amorphous TiO₂ to crystalline TiO₂ on the TiN surface. After annealing the samples in N₂ and Ar at 500 °C for 2 hrs, the TiN_xO_y layer was found on the surface of the samples. Very thin crystalline TiO₂ and amorphous TiN_xO_y layers were found on the surface of the TiN samples after annealing at 650 °C for 2 hrs in the N₂/H₂=9 mixed gas. The TiN oxidation chemistry under these controlled oxygen and nitrogen partial pressures was also discussed.