ICMCTF1998 Session G8: Flat Panel Display Technologies
Time Period FrM Sessions | Abstract Timeline | Topic G Sessions | Time Periods | Topics | ICMCTF1998 Schedule
Start | Invited? | Item |
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8:30 AM | Invited |
G8-1 The Status and Future of Diamond Thin Film FED
R. Fink (FEPET, Inc.) Field emission displays have emerged as a leading contender of low-power flat panel applications. As one of the promising field emission cathodes (FECs), diamond thin film has unique advantages over its conventional micro-tip counterpart because of the superlative physical and chemical properties of diamond and the simplicity of cathode manufacturing. Over the last year, FEPET Inc., one of the leading organizations in developing diamond RECs, has made tremendous progresses in its cathode emission performance, film processing, and understanding of the emision mechanisms. Currently, an emission site density (ESD) of 2 x 10-5 sites / cm2 and current density of 100 mA / cm2 have been achieved at an extraction field of about 10 V / micron. We also developed a novel patterning process that allows emission patterning without applying any post - deposition processing to the film to degrade its emission properties. The improvement in film emission properties is found closely related to a diminished diamond peek and a strongly accentruated graphitic or amorphous carbon shift in the UV - Raman spectra. High resolution atomic force microscopy (AFM) analysis also showed an association of the emission sites with insulating - conductive - insulting regions of the surface. With the achievable ESD today, diamond film FEC can already find many practical applications such as low to medium resolution displays and backlights for LCDs. For high resolution color displays, significant improvement in emission site density is still necessary and a substrate with high quality surface becomes indispensable. The use of high-temperature glass applied for polysilicon AMLCDs or a low-temperature diamond thin film deposition process needs, therefore, to be developed. |
9:10 AM |
G8-3 Carbon Cathode Requirements and Emission Characterization for Low-voltage Field Emission Displays
A.A. Talin, B.F. Coll, E.P. Menu, J. Markham, J.E. Jaskie (Motorola) In the following paper, we discuss the essential qualities that a low-barrier field emission material must posses so that it can be successfully incorporated into a low-cost, low-voltage FED. We emphasize the emission characteristics, indicating the minimal requirements for threshold field and emission site density. Furthermore, we describe the types of measurement performed at Motorola in evaluating perspective low threshold field cathodes. Finally, we share emission results obtained with materials which we consider promising for future FEDs. |
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9:30 AM |
G8-4 Electron Field Emission from Amorphous Carbon Thin Films
R.D. Forrest, S.R.P. Silva, A.P. Burden, J.V. Anguita (University of Surrey, United Kingdom); G.A.J. Amaratunga (University of Liverpool, United Kingdom) Amorphous carbon (a-C) thin films with its large area deposition capabilities and low threshold voltages for electron emission holds great promise as a future flat cathode material. We have deposited hydrogenated a-C (a-C:H) and nitrogenated a-C (a-C:H:N) thin films at different self bias voltages, pressures and gas compositions using a capacitively coupled radio frequency plasma enhanced chemical vapour deposition system. The samples were annealed at various temperatures and their electrical conductivity and electron emission properties measured. The field emission properties of the samples are used to ascertain whether or not there is a correlation between the emission characteristics and the heat treatments performed. It is hoped that the heat treatment will help in conditioning cathodes without the need for current or voltage stressing. Electron emission is observed at fields as low as 10 V/um. Lifetime tests show that the current turns off after a while, which is in keeping with the space charge interlayer model proposed for these films. |
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9:50 AM |
G8-5 Field Electron Emission from Ultrathin Diamond-Like Carbon Films Deposited Using an RF Inductively Coupled Plasma (ICP) Source
B. Druz (Veeco Instruments Inc.); A. Hayes, E. Ostan (Veeco Instruments, Inc.); V.I. Polyakov, N.M. Rossukanyi (Institute of Radio Eng. & Electronics, Russia); V.D. Frolov, V.I. Konov, A.V. Karabutov (General Physics Institute, Russia) Diamond-like carbonfilms 5 - 15 nm thick were deposited onconductive n-Si and metal substrates using highly reproducible direct ion beam deposition from a RF ICP source 1. Combinations of gases such as Ch 4, CH 4 -N2, CH2 4 -N2 -He we used to form plasma. The field electron emission of the films were examined as a function of deposition conditions and post-deposition surface modification by Ni ultrathin coatings. A specially designed high vacuum scanning tunneling-field emission microscope was employed for simultaneous mapping of the topography, work function and local field electron emission intensity. It was shown that the deposited DLC films demonstrated efficient field emission, and long-term stability. The results are interpreted based on band bending (built-in electrical field), and reduced electrical resistivity of namometer scale thick films along with the deviation of the resistivity over the surface 1B. Druz et al., Surface and Coatings Technology 86-87 (1996) 708-714 |
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10:10 AM |
G8-6 Field Emission Spectroscopy on Carbon Thin Films
O. Gröning, O.M. Küttel, L-O. Nilsson, L. Diederich, L. Schlapbach (University of Fribourg, Switzerland) World wide great efforts are underway to the commercial production of field emission flat panel displays (FED's). There is a great interest to replace the metal micro tip emitters in these panels by flat thin film emitters. In this context electron field emission (FE) from carbon thin films (e.g. Chemical Vapor Deposition (CVD) Diamond and Diamond Like Carbon (DLC) received great interest. Impressive emission curents can be drawn from these carbon films by applying moderate electric fields down to a few volts per micrometer. Still a fundamental understanding of the emission process is lacking. Yet such an understanding is necessary in order to obtain optimal emitting cathodes. We have investigated the emission properties of DLC- and CVD-diamond films, as well as emission from p-doped and nitrogen containing diamond single crystals using Field Emission Spectroscopy. From the energy spectra of the field emitted electrons we were able to determine important physical parameters of the emitters like work function. Field enhancement, field penetration and origin of the electrons with regard to the bandstrcuture. We will discuss different emission models on the basis of our experimental results. In the case of diamond films we will discuss the relations between field emission and negative electron affinity (NEA). We will also make comparison between discharge activated and no activated field emission on DLC- and CVD diamond films. The microscopic structure of the films was studied by HRSEM (High Resolution Scanning Electron Microscopy) and AFM (Atomic Force Microscopy), where simultaneous to the topography of the sample the conductivity is mapped. |
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10:30 AM |
G8-7 Work Function of Transparent Conducting Multicomponent Oxide Thin Films Prepared by Magnetron Sputtering
T. Minami, T. Miyata, K. Shimokawa, Y. Takeda (Kanazawa Institute of Technology, Japan) The work function of transparent conducting oxide (TCO) films has a critical importance in optoelectronic device performance because it affects the energy barrier height at the heterojunction interface and the electron field emission. New ternary compounds and multicomponent oxides have recently gained much attention as promising materials for transparent conducting films because these films can be created with properties suitable for specialized applications by controlling the chemical composition. In this work, we report the work function of transparent conducting multicomponent oxide films and discuss the work function as a function of the chemical composition in multicomponent oxides composed of combinations of binary oxides or ternary oxides. TCO films consisting of binary oxides such as In2O3, SnO2 and ZnO, and ternary oxides such as Zn2In2O5, In4Sn3O12, GaInO3, ZnSnO3 and MgIn2O4 were prepared by magnetron sputtering. In addition, transparent conducting films consisting of multicomponent oxides composed of combinations of these binary oxides or these ternary oxides were also prepared by magnetron sputtering. The work function of these TCO films was measured by ultraviolet photoelectron spectroscopy (UPS) (Model AC-1, RIKEN KEIKI) operated in air. It was found that the work function as well as the electrical, optical and chemical properties of transparent conducting multicomponent oxide films could be controlled by varying the chemical composition. |
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10:50 AM |
G8-8 Application of High Temperature Deposited Aluminum Gate Electrode to the Fabrication of a-Si:H TFT
P.-S. Shih (National Chiao Tung University, ROC); T.C. Chang (National Nano Device Laboratory, ROC); S.M. Chen, M.S. Feng, C.-C. Chang (National Chiao Tung University, ROC) Aluminum is a good candidate of low resistivity metal used on TFT-LCD panel as the gate electrode of TFT, but its thermal and mechanical stability is inferior. Hillocks sometimes form on Al film surface. Minimizing the temperature difference between Al deposition step and subsequent higher temperature process is expect to be advantageous to enhance the resistance of hillock formation. In this work, hot aluminum was the first time, to our knowledge, used as the gate electrode of a-Si:H TFT. Effects of deposition temperature on the surface roughness and hillock suppression of sputter-deposited Al films were investigated. The surface roughness became smoother during raising annealing temperature up to 300OC, but surface became rougher if annealing temperature raised furthermore. The electrical performances of a-Si:H TFT changed corresponding to the change of Al gate electrode. The a-Si:H TFT with Al gate deposited at 300OC had the best performances. The single-layered (SiNx) insulator TFT had the best performance: field effect mobility=0.71cm2/V-sec and Ssub=0.32V/decade. The double- layered (Al2O3/SiNx) insulators TFT had the best performance: field effect mobility=0.78cm2/V-sec and Ssub=0.28V/decade |