Colloidal InP quantum dots are a leading heavy-metal-free semiconductor material for spectral downconversion in current generation display technologies and future generation energy efficient LEDs. Achieving the brightest and narrowest photoluminescence (PL) relies on the synthesis of structurally and electronically defect-free quantum dots. InP quantum dots’ high propensity for oxidation and the inherent oxidative defects arising from commonly used synthesis methods therefore motivates a systematic approach to probe InP oxidation as a function of synthesis and surface treatments and correlation with the resultant optical properties. Phosphorus X-ray Emission Spectroscopy (XES) presents itself as an exceptional tool in this regard. In this talk, I will show recent results from computational modeling where we find that native InP surface oxides give rise to dark states near the band edge. Replacing the surface indium with zinc to form a monolayer ZnO shell results in the reduction of dark states. Using ALD-inspired successive ionic layer adsorption and reaction (SILAR), we developed the colloidal, layer-by-layer growth strategy of metal oxide shells (i.e. ZnO, CdO, GaO_x, AlO_x) on InP quantum dots at room temperature using common ALD precursors (i.e., metal alkyls and water). Metal oxide-shelled InP QDs generally show enhanced PL and evidence of bulk and local structural perturbations arising from the metal oxide as determined by X-ray diffraction and X-ray absorption spectroscopy. Further, we explore the impact of these metal oxide interfaces on the PL QY and emission linewidth of InP/ZnSe core/shell QDs. Upon growing a thin ZnSe shell, we observe improved PL properties, which we hypothesize to be attributable to the inhibition of phosphorus migration to the shell due to the presence of the metal oxide interlayer, as supported by X-ray emission spectroscopy. Taken together, these results suggest a clear path forward in the control and design of complex QD interfaces with atomistic insight for optoelectronic technologies.

Chirally modified heterogeneous catalysts promise massive savings of cost and toxic waste in the production of enantiopure precursors for high-value chemicals such as pharmaceuticals, fertilizers, or fragrants [1]. A key aspect is the thermal stability of chiral modifiers, which generally are chiral organic molecules bound to a chemically active metal surface. The enantioselective hydrogenation of methylacteoacteate (MAA) is a topical reaction, which is catalysed by nickel modified with chiral carboxylic acids, such as alanine, tartaric acid, or aspartic acid [2]. The components of this catalytic system have been investigated using various surface sensitive techniques [3,4,5]. Here we present a study of the thermal stability of alanine on the three most common Ni surfaces, {111}, {100}, and {110}, using synchrotron-based temperature-programmed photoelectron spectroscopy and X-ray absorption spectroscopy. In contrast to common experience with smaller molecules, alanine is more stable on the more open {110} and {100} surfaces compared to {111}. Comparison with a detailed DFT study identifies structural and electronic effects that play a role in this unusual behaviour.

References:

[1] G. Held and M. J. Gladys, Topics in Catalysis 48 (2008) 128 – 136.
[2] Izumi, Y., Adv. Catal. 1983, 32, 215−271.
[3] Keane, M. A., Langmuir 1994, 10, 4560−4565.
[4] P. Tsaousis, et al., J. Phys. Chem. C 122 (11) (2018) 6186 – 6194.
[5] R. E. J. Nicklin, et al., J. Phys. Chem. C 122 (2018) 7720 – 7730.
[6] W. Quevedo, et al., Langmuir 36 (2020) 9399 – 9411.

Due to their outstanding oxidation and wear resistance, cubic (Ti,Al)N is widely used as protective coatings on forming and cutting tools. These characteristics make (Ti,Al)N also an attractive candidate for the protection of polymer components. The composition-induced changes in the interfacial bond formation of DC magnetron sputtered TiN, AlN, and Ti_0.25Al_0.25N_0.5 onto polycarbonate (PC) substrates are systematically investigated by correlating theory and experiment. In order to simulate the sputtering condition by ab initio molecular dynamics, a periodic structural model of bulk PC consisting of 394 atoms was bombarded by several Ti, Al, and N atoms with a kinetic energy of 1 eV. While both Ti and N atoms show high reactivity towards all functional groups of the polymer during the surface bombardment, Al atoms selectively react only with the carbonate group of PC or other reactive functional groups that have formed during previous bombardment events (e.g. C-N groups). At the PC | TiN and PC | TiAlN interfaces, Ti and N contribute equally to the interfacial bond formation, whereas the PC | AlN interface is defined mostly by C–N groups with Al-rich clusters forming on top of these groups. X–ray photoelectron spectroscopy data of the PC | X interfaces (X = TiN, AlN, TiAlN) show a very good agreement with the above-discussed predictions as the formation of C-N, C-(Ti,Al), and (C–O)–(Ti,Al) bonds is experimentally verified. This shows that the here employed computational strategy enables predictions of the interfacial bond formation between polycarbonate and metal nitrides, and it is reasonable to assume that the here proposed research strategy can be readily adapted to other polymer | inorganic material interfaces.

Understanding the role of defects and interfaces is necessary in order to realize many of the promising novel properties of complex oxide heterostructure devices. To this aim, we employ resonant angle-resolved photoemission spectroscopy to probe the electronic structure with elemental and orbital specificity of complex oxide heterostructure LaTiO₃/SrTiO₃ (LTO/STO).Combining these spectroscopy measurements with in-situ growth characterization we are able to determine the minimum thickness required to achieve high quality heterostructures with abrupt interfaces and to correlate the formation with the 2DEG with the interface termination LTO/STO vs STO/LTO.In addition, we explore the role of oxygen vacancies in formation of the 2DEG on the bare substrate and reveal that contrary to expectations, the 2DEG is Ti⁴⁺ in character while the oxygen defects are Ti³⁺ in character.