ALD2023 Tuesday Morning
Sessions | Time Periods | Topics | Schedule Overview
Hover over a paper or session to view details.
Click a Session in the first column to view session papers.
Session | Tuesday, July 25, 2023 | |||||||||||||||
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8:00 AM | 9:00 AM | 10:00 AM | 11:00 AM | |||||||||||||
AA1-TuM |
Nanoscale Surface Engineering for Battery Electrode and Solid Ionic Electrolytes
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Enabling Fast Charging of Lithium-ion Batteries by Coating of Graphite with ALD
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Aluminum Doping of Lithium Phosphate using Atomic Layer Deposition
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Developing High-Performance Nickel-Rich Cathodes of Lithium-ion Batteries via Atomic Layer Deposition
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Molecular-Layer-Deposited Zincone Films Induce the Formation of LiF-Rich Interphase for Lithium Metal Anodes
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Deconvoluting the Impacts of Lithium Morphology and SEI Stability on Battery Cyclability Using ALD-Grown Thin Films
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Break & Exhibits
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AA2-TuM |
ALD for MEMS Sensors and Actuators
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Applications of Piezoelectric, Ferroelectric, and Antiferroelectric Thin Films Grown by Atomic Layer Deposition
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Effect of RF Substrate Biasing in Tuning the Tribological Properties of Plasma Enhanced Atomic Layer Deposited Titanium Vanadium Nitride Thin Films
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Towards ALD of hard AlTiN coatings
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AF1-TuM |
Precursor Design Enabling Angstrom Era Semiconductor Manufacturing
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Atomic Layer Deposition of Silver Halides
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Novel Metal Fluoride ALD Processes
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Halide-free, Low Melting, Volatile, Thermally Stable Mo(0) Precursors for ALD of Mo films
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Thermal Atomic Layer Deposition of MoC Thin Films
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Precursors and Processes for the Atomic Layer Deposition of Bismuth Metal Thin Films
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Atomic Layer Deposition of Tin Oxide Thin Films Using a New Liquid Precursor Bis(ethylcyclopentadienyl) Tin
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Break & Exhibits
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AF2-TuM |
Influence of Plasma Species on the Growth Kinetics, Morphology, and Crystalline Properties of Epitaxial InN Films Grown by Plasma-Enhanced Atomic Layer Deposition
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Towards Self-Limiting III-Nitride Epitaxy via Hollow-Cathode Nitrogen Plasmas
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Thermal Atomic Layer Deposition of Gallium Nitride at 150 - 300°C using Tris(dimethylamido)gallium Precursor and Hydrazine
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Crystalline Gallium Nitride Deposition on SiO2/Si by RF-Biased Atomic Layer Annealing
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ALD+ |
Intensified Atomic Layer Deposition and Atomic Layer Etching
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Mass Changes During and After Al(CH3)3 Exposures for Thermal Al2O3 ALE at Low TemperaturesUsing HF and Al(CH3)3 as Reactants
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Crystallinity of Sacrificial Etch Layer Influences Resulting Structure During Simultaneous Deposition and Etching
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There's no Place like a Surface: How Deposition and Etch Chemistry Depend on the Nature of the Surface
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Substrate Dependent HfO2 Atomic Layer Etch Rate Evolution Observed by In-situ Quartz Crystal Microbalance during Integrated ALD+ALE
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Al Mirror Passivation with Atomic Layer Etching of Native Oxide and in-Situ Passivation with Atomic Layer Deposition of AlF3 or MgF2
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ALE-TuM |
Plasma Oxidation of Copper: Molecular Dynamics Study with Neural Network Potentials
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Multi-scale Simulation Study for the Role of High C/F ratio Plasma on Etch Selectivity of SiO2 and Si3N4 in q-ALE
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Selecting a Method for ALE Modeling
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AS1-TuM |
Advances in the Industrial Adoption of Selective ALD Processes
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Control of Silanol Density in Silicon Oxide Surfaces via Gas-Phase Treatments to Control Metal Atomic Layer Deposition
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Inherently Area-Selective Atomic Layer Deposition of Device-Quality Hf1-xZrxO2 Thin Films through Catalytic Local Activation
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Targeted Dehydration as a Route to Site-Selective Atomic Layer Deposition at TiO2 Defects
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Inhibitor-Free Area Selective Atomic Layer Deposition based on Atomic Layer Nucleation Engineering and Surface Recovery with a Feature Size of Nearly 10 nm
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Dopant-selective Choreography of Metal Deposition for Bottom-up Nanoelectronics
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Effect of Surface Pretreatment to reduce the Incubation Period of Iridium Thin Film grown by ALD on the Oxide Surface
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Break & Exhibits
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AS2-TuM |
Consequences of Random Sequential Adsorption of Inhibitor Molecules for Loss of Selectivity During ALD
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In-Situ Formation of Inhibitor Species Through Catalytic Surface Reactions During Area-Selective Tan ALD
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Area Selective Atomic Layer Deposition of Ru and W Using W Precursor Inhibitor
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Partial Surface Passivation for Controlled Growth and Conformality Improvement on High Aspect Ratio Features Using Small Molecule Inhibitors
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Fundamental Surface Chemistry Considerations for Selecting Small Molecule Inhibitors for AS-ALD
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