ALD2018 Monday Afternoon

Sessions | Time Periods | Topics | Schedule Overview

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Session Monday, July 30, 2018
1:30 PM 2:30 PM 3:30 PM 4:30 PM
Atomic Layer Deposition as a Key Technology for Manufacturing 3D V-NAND Flash Memory
Room-temperature Resonant Tunneling by Band-offset Engineering of Nanolaminated High-k Oxides Deposited by Atomic-layer Deposition
Atomic Layer Deposition of HfO2 Thin Films using Hf(BH4)4 and H2O
TaN Based Multi-Vth Devices for 7nm and Beyond Technology
Atomic Layer Deposition: A Few Prospective Applications Aiming Mass-production after Current Si-based Semiconductor Process
Atomic Layer Deposition of NbOx Films with Tunable Stoichiometry Using Hydrogen Plasma Reduction
Effects of Fluorine in ALD W on Dielectric Properties
Low Temperature Atomic Layer Deposition of Ru for Copper Metallization
Conformal Growth of Low-resistivity Ru by Oxygen-free Thermal Atomic Layer Deposition
Plasma Enhanced Atomic Layer Deposition of Nickel and Nickel-based Alloy Thin Films for High-quality and Thermally Stable Nickel Silicide
Ternary Thin Film Alloys of Ti-Si-N as Low Resistance Diffusion Barrier for Memory Applications
Atomic Layer Deposition of Mixed Phase TiNxCy using Highly Reactive Substituted Hydrazines and Tetrakis(dimethylamido)Titanium
Forcing Timescale: Can Monolayer Stability Be Built Into a Precursor?
Comparative Study on New Heteroleptic Zirconium ALD Precursors
A New Class of ALD Precursors for Aluminum Oxide – Potential Alternative to TMA!
Atomic Layer Deposition of Aluminum Metal Using a Thermally Stable Aluminum Hydride Reducing Agent
Low Temperature PE-ALD of Copper Films using Copper Aminoalkoxides Precursors with Hydrogen
Atomic Layer Deposition of Rhenium Selenide Thin Films
Plasma Enhanced Atomic Layer Deposition of Silicon Nitride Films with Inorganic Disilane Precursors
Different Growth Mechanism of SiO2 Layer on Various High-k films by PE-ALD using Tris(dimethylamino)silane and Oxygen Plasma
In-situ Surface Science Studies of Atomic Layer Processes of GaN Surfaces in Preparation for Atomic Layer Epitaxial Growth
Surface Chemistry during Atomic Layer Deposition of Zn(O,S)
Surface Reaction Mechanism of Atomic Layer Deposited Metal on Organic Textiles
Insight in Surface Dependence and Diffusion-mediated Nucleation Mechanism of Ruthenium Atomic Layer Deposition on Dielectrics
Surface Oxidation Model in Plasma-enhanced ALD for Silicon Oxide Films Including Various Aminosilane Precursors
Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 and HfO2 Films Investigated by using in situ Auger Electron Spectroscopy
Investigation of Atomic Layer Etching Process and UV Damage for AlGaN/GaN HEMT
Plasma-assisted Atomic Layer Etching of Si-based Dielectric Films Studied using in situ Surface Diagnostics
Silicon Atomic Layer Etching by Two-step Plasma-enhanced Atomic Layer Deposition Consisting of Oxidation and (NH4)2SiF6 Formation
Factors in Selectively Etching SiO2 over Si3N4 Using C4F8/Ar Atomic Layer Etching
Bias System for Controlling Ion Energy Distributions
Reactions of Hexafluoroacetylacetone ( hfac) and Metal Surfaces under Low-energy Ion Irradiation
Application of ALE Technology to <10nm Generation Logic Device Fabrication
Isotropic Atomic Layer Etching of ZnO on 3D Nanostructures, using Acetylacetone and O2 Plasma
Etching Reactions of Halogenated Layers Induced by Irradiation of Low-energy Ions and Gas-clusters
Optimization of Atomic Layer Etch Process for Fabrication of Dual Barrier GaN-based Power Device using in-situ Auger Spectrometric Surface Ananlysis
ALE to Enable Memory Scaling
Comparisons Between TiO2/Al2O3 Nanolaminates Grown by Thermal and Plasma Enhanced Atomic Layer Deposition: Growth Mechanism and Material Properties
Texture Control of ALD PbTiO3 and PbTixZr1-xO3 Films by Hot Chuck and Rapid Thermal Annealing
Optical and Electrical Properties of TixSi(1-x)O2 Films Prepared by ALD
Concerted Coating and Reduction for the Fabrication of Magnetic Fe3O4/TiO2 Core-shell Nanoparticles
Aluminum Nitride – From Amorphous to Highly Oriented Hexagonal Thin Films
Purely Thermal Deposition of Polycrystalline Gallium Nitride Films at 400oC
ABC-type pulsing for group 13 nitrides
Low-temperature Growth of 2-D SnS Thin Films by Atomic Layer Deposition
Atomic Layer Deposition of 2D Semiconductor SnS2
Wafer-scale Growth of Single Phase SnS2 Thin Films by Atomic Layer Deposition
ALD Tin Sulfide Thin Films and Their Device Applications
Synthesis of 2D MoS2 and MoS2-Graphene Heterojunction by Atomic Layer Deposition
Atomic Layer Deposition of MoS2/WS2 Nanolaminates from bis(tert-butylimido)-bis(dialkylamido) Compounds and 1-Propanethiol
Wafer-scale MoS2 Monolayer Grown on SiO2/Si Substrate by Modified Atomic Layer Deposition
X-ray Absorption Spectroscopy of Amorphous and Layered ALD Molybdenum Sulfide Films Prepared using MoF6 and H2S
Sessions | Time Periods | Topics | Schedule Overview