NAMBE 2025 Wednesday Morning

Sessions | Time Periods | Topics | Schedule Overview

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Session Wednesday, August 27, 2025
8:00 AM 9:00 AM 10:00 AM 11:00 AM 12:00 PM
NAMBE1-WeM
Heteroepitaxial Growth of Highly Anisotropic Sb2Se3 Films on GaAs
Evaluating Dopant Candidates for N-Type SnTe Films Grown by Molecular Beam Epitaxy
Tunable Electrical Conductivity in Ferromagnetic Semiconductor Samarium Nitride
Formation of [111]-Ge Domains in Layered α-FeGe2 by MBE and Solid Phase Epitaxy
Twin-free (MnSb2Te4)x(Sb2Te3)1-x Growth on In2Se3/InP(111):B Substrates by Molecular Beam Epitaxy
Epitaxial Growth of SnGeSe Ternary Alloys on GaAs Substrates
Controlling Antiphase Twins in Bi₂Se₃ via Step-Terminated Al₂O₃ Substrates
“Kinetic Roughening” in Low-temperature MBE Growth of III-As Heterostructures on InP(111)B
BREAK & EXHIBITS
NAMBE2-WeM
Artificial Intelligence for on-the-Fly Analysis and Control During Oxide Molecular Beam Epitaxy
A Novel Approach for P-Type Doping in Semiconductor Heterostructures: Interface Fermi-Level Position Engineering
GaP Planar Coalescence Over Embedded Dielectric Gratings by Molecular Beam Epitaxy
High-Efficiency Entangled Photon Sources Using (111)-Oriented Quantum Optical Metasurfaces
Crystalline Direction and Shadowing Effect on Overgrowth of Patterned Features on GaAs (001)
Thermal Laser Epitaxy System for Synthesis of Thin Films Containing Refractory Elements
Rolled-Up Metamaterials (RUMMS) for Infrared Imaging
Spectroscopic Ellipsometry as an in Situ Technique to Control MBE Growth
Closing Remarks & Thank Yous
Sessions | Time Periods | Topics | Schedule Overview