NAMBE 2024 Wednesday Morning
Sessions | Time Periods | Topics | Schedule Overview
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        Click a Session in the first column to view session papers.
    
    
| Session | Wednesday, July 24, 2024 | ||||||||||||||
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| 8:15 AM | 9:15 AM | 10:15 AM | 11:15 AM | ||||||||||||
| NAMBE1-WeM | 
                                    Welcome & Sponsor Thank Yous
                                    
                                 | 
                                    Tunnel Junction Engineered MBE-grown Nanowires: Toward Self-Powered, Dual-Wavelength Photoelectrochemical Photodetectors for Secure and Efficient Underwater Wireless Sensors Networks
                                    
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                                    MBE Growth of n-type AlN and Defect Characterization Using Deep UV Photoluminescence
                                    
                                 | 
                                    Evolution of AlN: from 1 nm Nitridation to 2 µm by Molecular Beam Epitaxy
                                    
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                                    Addressing the High Coercive Field of ScxAl1-xN via Magnesium Doping in Molecular Beam Epitaxy
                                    
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                                    Epitaxial Integration of Transition-Metal Nitrides with Cubic Gallium Nitride
                                    
                                 | 
                                    Epitaxial Growth of High ScN Fraction ScAlN on (111) Si 
                                    
                                 | BREAK | |||||||
| NAMBE2-WeM | 
                                    Characterization of Random Alloy Al0.85Ga0.15As0.07Sb0.93 for Mid-Wave Infrared Avalanche Photodiodes
                                    
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                                    Comparison Study of InAs/InAsSb and InAs/GaSb Type-II Superlattices
                                    
                                 | 
                                    Use of Hydrogen Plasma to Increase Minority Carrier Lifetime in InAsxSbyBi1-x-y
                                    
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                                    Micro-Transfer Printing of Gasb-Based Infrared Devices Grown by Molecular Beam Epitaxy
                                    
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                                    The InAsSb-based SACM APD with Hole-Initiated Multiplication
                                    
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