NAMBE 2022 Session GD-MoP: MBE-Grown Devices Poster Session
Session Abstract Book
(256KB, Aug 31, 2022)
Time Period MoP Sessions
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GD-MoP-1 High Power Sb-Based Mid-Wave Infrared Diode Laser Arrays
Andy Lu, Chi Yang (Air Force Research Laboratory) High power diode laser source in the 2-3µm spectral range are critical for numerous applications, including defense infrared countermeasures, remote gas sensing, and as pump source for solid state lasers. In this paper, we present high power diode laser arrays using antimonide-based diode laser architectures spanning the 2.0-2.7µmwavelength range. The diode laser structure used was designed for 2.0µm, 2.4µm, and 2.7µm emission and grown using molecular beam epitaxy on GaSb substrates. The active region consists of lattice-matched quinary alloy for 2.7µm and quaternary alloy for 2.0µm and 2.4µm waveguide and four compressively strained, InGaAsSb quantum wells laced at the center with an inter-well spacing of 50 nm. The n-type bottom-clad and the p-type top-clad layers were both 1.5µm-thick lattice-matched AlGaAsSb alloy layers doped with Te and Be, respectively. Four-bar stack arrays were processed, fabricated, and packaged with water-cooled microchannel cooler. We demonstrated continuous wave operation of these diode array stacks with output power of 25 Watts at 2.0µm, 15 Watts at 2.4µm, and >7 Watts at 2.7µm. |
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GD-MoP-3 Annealing Effect on the Magnetic Anisotropy of P Composition Graded GaMnAsP Layers
Seul-Ki Bac, Sanghoon Lee (Korea University); Xinyu Liu, M. Dobrowolska (Physics Department,); J. K. Furdyna (Physics department) We have investigated annealing effect on the magnetic anisotropy properties of GaMnAs1-yPy thin film, in which phosphorus content y varies from 0 % to 24 % along the growth direction. The Hall effects measurement revealed that the portion of magnetic layers having either only in-plane easy axes, both in-plane and out-of-plane easy axes, or only out-of-plane easy axis in the sample to be 80 %, 10 %, and 10 %, respectively, in as-grown sample. Such gradual change of the magnetic anisotropy in the film from the in-plane to the out-of-plane anisotropy with increasing P concentration is in accordance with the continuous variation of the strain from compressive to tensile toward the film surface. However, thermal annealing significantly changes magnetic anisotropy of the graded GaMnAs1-yPy film. In particular, the intermediate region having both in-plane and out-of-plane easy axes nearly disappears in the film after thermal annealing and the film is divided into two types of layers having either only in-plane or only out-of-plane anisotropy. This investigation shows that thermal annealing significantly changes the magnetic anisotropy of graded GaMnAs1-yPy film and thus one can strategically use the process to realize orthogonal magnetic bilayer consisting of in-plane and out-of-plane easy axes. |