NAMBE2018 Sunday Morning
Sessions | Time Periods | Topics | Schedule Overview
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| Session | Sunday, September 30, 2018 | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 8:45 AM | 9:45 AM | 10:45 AM | 11:45 AM | ||||||||||||
| MBE-SuM | 
                                    Optically Active Dilute-Antimonide Ga(In,Sb)N Nanostructures for Deep-visible Optoelectronics and Solar Fuel Applications
                                    
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                                    The Effects of N Incorporation in GaAsSb based Core-shell Nanowires
                                    
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                                    Growth of GaAsSb Axial Nanowires on Graphene by Molecular Beam Epitaxy
                                    
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                                    Cylindrically Confined Superparamagnetic MnAs Nanocrystals Embedded in Wurtzite (In,Ga)As-(Al,Ga)As Core-shell Nanowires
                                    
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                                    Bright Single InAsP Quantum Dots at Telecom Wavelengths in Position-Controlled InP Nanowires
                                    
                                 | Break | 
                                    Continuously-Graded Parabolic Quantum Wells in AlGaAs
                                    
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                                    Growth and Characterization of Al0.48In0.52As on InP (100) by Hybrid MBE-CBE for Optoelectronics Applications
                                    
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                                    InAlAs/InGaAs Growth on InP(111)A and InP(111)B Substrates with Varying Substrate Offcut Angle
                                    
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                                    Growth and Characterization of Undoped InGaAs by Hybrid MBE-CBE for Optoelectronic Applications
                                    
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                                    Epitaxial Growth and Properties of II3V2 Semiconductors: Mg3N2 and Zn3N2
                                    
                                 | 
                                    Examining the Effects of Strain and Tl Content on the Properties and Structure of TlGaAs Films
                                    
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