IWGO 2026 Tuesday Afternoon
Sessions | Time Periods | Topics | Schedule Overview
Hover over a paper or session to view details.
Click a Session in the first column to view session papers.
| Session | Tuesday, August 4, 2026 | ||||||||||||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2:00 PM | 3:00 PM | 4:00 PM | 5:00 PM | ||||||||||||||||||||||||||||||||||||||||||||
| IWGO-TuA1 |
Heterogeneous Gallium Oxide Integration and Vertical Device Technology
|
>10 kV Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2
|
Semiconductor Properties of Epitaxial NiGa2O4 Spinel That Forms at Ga2O3/NiO Interfaces
|
Breaking the 6 eV Barrier: Colossal Bandgap Electronics with Si Doped α-(AlXGa1-X)2O3 by S-MBE
|
Thin-Film β-Ga2O3 Composite Substrates for Thermal Management Solutions
|
COFFEE BREAK
|
|||||||||||||||||||||||||||||||||||||||||
| IWGO-TuA2 |
Conductive Al2O3 with Ohmic Contacts via Ion Implantation
|
In-Situ X-Ray Topography Observation of Behavior of Dislocations in β-Ga2O3(001) Schottky Barrier Diode During Applying Voltage
|
Killer Defects in (011) HVPE-Grown β-Ga2O3 Schottky Barrier Diodes Studied by Synchrotron X-ray Topography and Emission Microscopy
|
Impact of Bias Dependent Joule Heating on Gallium Oxide Lateral Transistors via Deep UV Thermal Imaging
|
Engineered Substrates for Ga2O3 Vertical Power Devices
|
Design and Preliminary Verification of a Si/β-Ga2O3 Hybrid Half-Bridge Power Module
|
|||||||||||||||||||||||||||||||||||||||||