IWGO 2026 Friday Morning
Sessions | Time Periods | Topics | Schedule Overview
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Click a Session in the first column to view session papers.
| Session | Friday, August 7, 2026 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 7:15 AM | 8:15 AM | 9:15 AM | 10:15 AM | 11:15 AM | 12:15 PM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IWGO-FrM1 |
Breakfast
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PLENARY: Scaling Ga2O3 Power Electronics: From 10 kV Devices to Megawatt Modules
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Formation of High-Quality SiO2/β-Ga2O3 MOS Structures: Design and Optimization of Post-Annealing Processes
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Quaternary (AlxScyGa1−x−y)2O3 for Lattice-Matched β-Ga2O3 Heterostructures
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Characterization and Light Emission of CBLs with Varying Nitrogen Implantation Doses for β-Ga2O3 Devices
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Development of Surface Preparation Methods for Insulating and Conductive, Miscut (100) β-Ga2O3 Substrates
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Analysis of Packaged Ga2O3 Schottky Barrier Diodes (SBDs) for AC Rectification at Industrial Voltages
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2.2 kV NiO Based JTE β-Ga2O3 Schottky Barrier Diode with Improved Reliability under High-Temperature Storage Stress
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>1 GW/cm2 β-Ga2O3 NiOx Heterojunction Diodes on MOCVD-Grown (110) and (010) Epilayers
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COFFEE BREAK
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| IWGO-FrM2 |
High-Performance β-Ga2O3 Vertical Diodes and FinFETs with High Electric Field Strength
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Heavy-Ion Microprobe Induced Parasitic Channel in Ga2O3 MOSFETs
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Achievement of SiO2/β-Ga2O3 (001) MOS Interface with Low in Terface State Density by Employing ALD with O3 as an Oxidant and Low-temperature (600℃) Post-deposition Annealing
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Diffusion Suppression of Mg and High Performance β-Ga2O3 Current Blocking Layers by N+Mg Co-Doping Approach
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>3.3 kV Ga2O3 Monolithic Bidirectional Switch: Impact of NiO/Ga2O3 Interface Charges
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Kilovolt Class β-Ga2O3 Split Gate Vertical FinFET for Reduced Gate Capacitance
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Closing Remarks
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