ICMCTF2006 Session D2-1: Diamond and Diamond-Like Carbon Materials
Time Period TuA Sessions | Abstract Timeline | Topic D Sessions | Time Periods | Topics | ICMCTF2006 Schedule
Start | Invited? | Item |
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1:30 PM | Invited |
D2-1-1 Biomaterial-Related Thrombosis: Possible Mechanism of Antithrombogenicity in Diamond-Like Carbon and Fluorinated Diamond-Like Carbon Films for Blood-Contacting Medical Devices
T. Hasebe (Tachikawa Hospital, Japan); A. Kamijo (University of Tokyo Hospital, Japan); E. Kobayashi, K. Yamamoto (National Institute of Advanced Industrial Science and Technology (AIST), Japan); Y. Koga (National Institute of Advanced Industrial Science and Technology, Japan); K. Takahashi (University of Tokyo Hospital, Japan); T. Suzuki (Keio University, Japan) Thrombogenic complications remain as one of the main problems for blood-contacting medical devices and can trigger life-threatening device failure. To reduce the risk of thromboembolism and complications following life-long course of anticoagulants, the improvement of the hemocompatibility of biomaterials is highly demanded. Surface coating is one method of improving both the mechanical and physical properties of implants in direct contact with blood and tissue. For example, our recent study demonstrated that fluorinated diamond-like carbon coatings (F-DLC) dramatically suppress platelet adhesion and activation on the material surfaces. Although the mechanism of biomaterial-associated thrombosis has not been fully elucidated so far, platelets play a pivotal role in thrombogenicity of biomaterials. Platelets attach to the sample surface and they change in shape by developing pseudopodia as their activation level increases. According to the SEM images of activated platelets, we can only observe the surface morphology of platelets and evaluate the degrees of thrombogenicity; however, actual reactions between platelets and material interface cannot be determined and platelet shape changes has remained unclear. What kind of elements of material surface do platelets recognize? How do the developing pseudopodia of platelets attach to the foreign surface? To address these questions, we observed the cross-section images of activated platelets on biomaterials interface by transmission electron microscopy (TEM) and tried to evaluate the relationship between morphological changes and surface components of materials. Such a study might prove the essential mechanism of biomaterials-related thrombosis, and we might have possibility to modify the surface of materials to minimize the material-related thrombosis. In this presentation, we will summarize the possible mechanism of antithrombogenicity in DLC and F-DLC films. |
2:10 PM |
D2-1-3 Quantifying Clustering in Disordered Carbon Thin Films
J.D. Carey, S.J. Henley, S.R.P. Silva (University of Surrey, United Kingdom) The effects of clustering on a nanometer scale of the carbon sp2 phase are important in understanding the electronic properties of disordered amorphous carbon thin films. This conductive sp2 phase is largely responsible for the optical and transport properties in the films. For films grown by plasma enhanced chemical vapour deposition, an increase in the unpaired electron spin density from 1017 to 1020 cm-3 is observed as the deposition self-bias is increased. At high deposition biases (negative self-bias), the Tauc gap, which is a measure of the mean sp2 cluster size, and the spin resonance line width, both decrease. These effects are attributed to enhanced delocalisation of the electron wavefunction, which in turn is associated with the larger sp2 clusters found at higher biases. We show that it is possible to describe the clustering of the sp2 phase in terms of a structural disorder and a topological disorder1. We also show that it is possible to tailor the electronic properties of films grown using pulsed laser ablation of graphite by varying the different background pressures of an inert gas during deposition, mimicking the self bias in a PECVD process. By increasing the background pressure, the surface morphology of the films change from atomically smooth (at low background pressure) to nodular and then filamentary, nanoporous films at the highest pressures used. Films grown at high background pressures exhibit room temperature photoluminescence (PL). A correlation with the results from visible Raman spectroscopy demonstrates that the intensity of the PL is directly related to clustering of the nanoscale sp2 phase2. 1 J.D. Carey and S.R.P. Silva, Phys. Rev. 70, 235417 (2004). 2 S.J. Henley, J.D Carey and S.R.P. Silva, Appl. Phys. Lett. 85, 6236 (2004). |
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2:30 PM |
D2-1-4 Effect of Thermal Annealing on the Atomic Bond Structure Analysis of ta-C Films Using Molecular Dynamics Study
S.-H. Lee, K.-S. Kim (Korea Institute of Science and Technology, Korea); Y.-C. Chung (Hanyang University, Korea); P.-R. Cha (Kookmin University, Korea); K.-R. Lee (Korea Institute of Science and Technology, Korea) Structure relaxation of tetrahedral amorphous carbon (ta-C) films by thermal annealing was investigated by molecular dynamic simulation. Thermal annealing of ta-C has been widely used to reduce its high level of residual compressive stress. However, the atomic scale mechanism of the reduction in the residual compressive stress is not clear yet. We produced ta-C films by deposition of energetic carbon atoms on a diamond (100) substrate with incident energy from 0 to 500 eV. Brenner's reactive bond order potential was used for carbon-carbon interactions. The annealing procedures of ta-C films were performed with NPT ensemble at from 0 to 1000 K. We examined the changes in atomic bond structure and the properties such as atomic bond configuration, radial distribution and average residual stress of ta-C films caused by thermal annealing. |
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2:50 PM | Invited |
D2-1-5 Microwave Plasma-Assisted Diamond Synthesis: A Brief Review of the Last Twenty Years and Vision of the Future
J. Asmussen (Michigan State University & Fraunhofer Center for Coatings and Laser Applications) Microwave plasma assisted CVD synthesis of diamond was first demonstrated during the early 1980s by Kamo et al [1] of Japan. Diamond synthesis was achieved in a small ( 2-4 cm ), tubular reactor where microwave energy was coupled into a quartz tube that was inserted through a waveguide. This reactor produced high radical densities and high quality diamond films and was inexpensive, simple to design, construct and operate. Hence it was utilized by many early diamond researchers to experimentally investigate and understand CVD diamond synthesis. However this reactor type had a number of inherent limitations such as deposition area, operating pressure regime, and input power there by limiting it commercial potential. Since these early investigations the significant potential of industrial application of CVD diamond synthesis has spurred numerous, innovative, microwave plasma reactor designs and associated CVD processes that have enabled the synthesis of a variety of high quality diamond materials, i.e. ultrananocrystalline diamond, polycrystalline diamond and single crystal diamond, at high rates (i.e. single crystal diamond > 50microns/hr), over large areas (i.e. > ten inch diameters ), and over a wide pressure regime(i.e. a few Torr to over 200Torr). This paper will briefly review the historical development of microwave CVD diamond synthesis techniques and then will focus on state-of- the art of microwave plasma reactor technology as it currently applies to a variety of CVD diamond synthesis applications. In particular, technologies that yield large area, uniform, high rate, high quality and controllable deposition will be described. It is recognized that diamond applications such as diamond MEMs, optical windows and lenses, heat sinks, gem materials, coating for tools and wear surfaces, etc. are driving reactor design and associated process development. Thus microwave reactor performance will be discussed with respect to several potential synthesis processes/applications ranging from small grained nano-diamond, to poly diamond and single crystal diamond. The presentation will conclude with a summary of the reactor design and process development challenges that if achieved would enhance the commercialization of CVD diamond synthesis applications. |
3:30 PM |
D2-1-7 Nanocrystalline Diamond Growth on Different Substrates
W. Kulisch, C. Popov (University of Kassel, Germany); V. Vorlicek (ASCR, Czech Republic); P.N. Gibson (Joint Research Centre of EC, Italy); G. Favaro (CSM Instruments, Switzerland) Thin nanocrystalline diamond (NCD) films were grown by microwave plasma chemical vapor deposition (MWCVD) on silicon wafers coated with polycrystalline diamond (PCD), cubic boron nitride and titanium nitride layers. A methane/ nitrogen mixture with a methane concentration of 17% was used as precursor, the substrate temperature was kept at 600°C, the working pressure was 38 mbar and the MW input power 1 kW. In the case of PCD and c-BN no pretreatment of the substrates was applied in order to deposit NCD, while no growth was observed on the TiN substrates without pretreatment in suspension of diamond powder (average grain size of 250 nm) in n-pentane which enhanced the diamond nucleation. The morphology of the films was studied by scanning electron microscopy (SEM) which revealed closed and uniform layers. The results from X-ray diffraction (XRD) showed that all films were composed of diamond crystallites with grain sizes of 3-5 nm. The Raman spectra of NCD were similar indicating that the substrate has no substantial influence of the bonding structure of the films. The mechanical properties of the films were also investigated. It was found that the hardness and the Young's modulus of NCD on PCD and c-BN determined by nanoindentations were higher than those of NCD on TiN due to the influence of the nature of the substrate. In contrary, the best adhesion was observed for the latter films most probably as a result of the better adhesion between the silicon substrate and the intermediate layers. |
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3:50 PM |
D2-1-8 Chemical Vapour Deposition of Diamond on Co-Cemented Tungsten Carbide Using CrN and SiC Interlayers
G. Cabral, N. Ali, J. Gracio (University of Aveiro, Portugal); J Gaebler, J. Lindner (Fraunhofer Institute for Surface Engineering and Thin Films IST, Germany); R. Polini (Universita' di Roma Tor Vergata, Italy) The prospect of obtaining good adhesion of diamond films onto cemented carbide (WC-Co) substrates is highly exciting due to numerous applications in machining highly-abrasive materials and in manufacturing long-lasting wear-resistant components. However, due to the presence of Co in the binder phase, it is difficult to produce diamond films that adhere to conventional WC-Co well. This element promotes the formation of graphitic carbon at the interface between substrate and diamond film, and this has a detrimental effect on film adhesion. The use of binder removal (Co etching) or interposition of diffusion barrier layers results in good adherence of a diamond film onto a WC-Co substrate. However, Co etching generates voids in the outermost layers of WC grains, which thus induces embrittlement of the cutting edge. In this work we have studied the hot filament chemical vapour deposition (HFCVD) of diamond films on WC-Co inserts previously coated with CrN or SiC interlayers. CrN interlayers were deposited by PVD reactive sputtering. SiC interlayers were deposited by HFCVD using a silane and methane mixture. PVD-coated inserts were characterized by Scanning Electron Microscopy (SEM) and X-Ray Diffraction (XRD), seeded with diamond suspension in an ultrasonic vessel and then subjected to diamond CVD. For sake of comparison, diamond films were also deposited onto WC-Co inserts submitted to conventional etching pretreatments. Diamond coated samples were characterized by SEM, XRD and Raman Spectroscopy. The performance of CVD diamond coated inserts was evaluated by dry turning of graphite and compared to the cutting performance of polycrystalline diamond (PCD) inserts. |
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4:10 PM |
D2-1-9 Raman Spectroscopy Characterization of Adherent Diamond Films on Steel Substrates with TiC Arc-Plated Interlayer
R. Polini (Universita' di Roma Tor Vergata, Italy); G. Mattei (Consiglio Nazionale delle Ricerche (ISC-CNR), Italy); R. Valle, F. Casadei (Centro Sviluppo Materiali (CSM) SpA, Italy) The prospect of obtaining good adhesion of diamond films onto steel substrates is highly exciting because the achievement of this objective will open up new applications in cutting tool industry. In fact, diamond films are suitable for tools applications because of their hardness, large wear resistance and chemical inertness. However, CVD diamond direct coating of steel substrates still represents a difficult task, and the major problem is represented by large diffusion of carbon into steel at CVD temperatures leading to very low nucleation density, cementite (Fe3C) formation and degradation of steel microstructure and properties. Recent work (R. Polini et al, ICMCTF 2005) demonstrated that well adhered diamond films can be grown on HSS by using a TiC interlayer deposited by PVD-arc technique. The resulting multilayer (TiC/diamond) coating had a rough surface morphology due to the presence of droplets formed at the substrate surface during the reactive evaporation of TiC. In this work we first present an extensive micro-Raman investigation of 2 µm- and 4 µm-thick diamond films deposited by Hot Filament CVD on TiC interlayers. The stress state of the diamond was dependent on both the films thickness and the spatial position of the coating on the substrate. In fact, on the top of TiC droplets the stress state of the diamond was much lower than the one of diamond in flat substrate areas. These results showed that diamond films deposited on rough TiC interlayers obtained by PVD-arc technique exhibited a wide distribution of stress values and that highly-stressed and well-adhered thin diamond films could be obtained also on flat regions of TiC interlayered steels. |
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4:30 PM |
D2-1-10 Optical, Electrical and Structural Investigations of Nanostructured Metal-Incorporated Amorphous Carbon Coatings
N. Benchikh (University Jean Monnet, Saint-Etienne, France); A. Zeinert, Y. Gagou (University de Picardie Jules Verne, France); C. Donnet, F. Garrelie (University Jean Monnet, France); K. Zellama (University de Picardie Jules Verne, France); A. Pailleret (University Pierre et Marie Curie, France); F. Rogemond (University Jean Monnet, France) The structure and physical properties of nano-structured metal (nickel and tantalum) incorporated amorphous carbon (a-C :Ni and a-C :Ta) thin films deposited by femtosecond pulsed laser deposition (PLD) have been investigated. Various complementary film characterizations, including atomic force microscopy (AFM), Fourier-transform infrared (FTIR) and micro-Raman spectroscopies have been used to determine the nanostructure of the a-C :Ni and a-C :Ta films, with a metal concentration range within 0.5 and 15 at.%. The electronic and optical properties have been also investigated in order to evaluate the potentialities of the coatings consisting in metallic nodules embedded in an amorphous carbonaceous matrix. The influence of the metal nature and concentration on the structure and properties of the films has been highlighted. The ability of femtosecond pulsed laser deposition to synthesize nanocomposite carbon-based films with tailored structures and properties is discussed. |
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4:50 PM |
D2-1-11 Nanoindentation Induced Deformation Behaviour of Diamond-Like Carbon Coatings on Silicon Substrates
A.J. Haq, P.R. Munroe, M. Hoffman (University of New South Wales, Australia); P.J. Martin, A. Bendavid (CSIRO, Australia) The deformation behaviour of diamond-like carbon (DLC) coatings on silicon substrates induced by indentation under different loading conditions has been investigated. A number of hydrogenated amorphous carbon films (a-C:H) were deposited on (100) oriented single crystal silicon substrates by plasma assisted chemical vapour deposition technique. The total sp3 content of these coatings (including C-H bonds) was estimated to be in the range of 35 - 40 % by Raman spectroscopy. The microstructures of the undeformed coatings were characterized by focused ion beam techniques (FIB) and cross-sectional transmission electron microscopy (XTEM). The coatings were subjected to nanoindentation over a range of loads from 100 to 500 mN with a 5 µm spherical indenter and 50 to 300 mN with a Berkovich indenter at different loading/unloading rates. The resulting load-displacement plots for the spherical indenter displayed pop-ins for maximum loads higher than 150 mN and a distinct pop-out for loads beyond 400 mN, whereas for the Berkovich indenter these discontinuities were observed even on loading to 100 mN. Following indentation, the surface and subsurface morphology of the indented regions were examined using various techniques, including atomic force microscopy, FIB and XTEM. Features such as micro-cracks within the DLC coating and delamination at the coating-substrate interface were observed. Furthermore cracking, slip on {111} and localized phase transformations were also observed in the silicon substrate, beneath the indent impression. The onset of these structural changes has been correlated to the mechanical behaviour of the coating during indentation. |