ICMCTF1999 Session C2: Structure/Property Relationships
Time Period TuA Sessions | Abstract Timeline | Topic C Sessions | Time Periods | Topics | ICMCTF1999 Schedule
Start | Invited? | Item |
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1:30 PM | Invited |
C2-1 Nanocomposite Films for Photonics
M.P. Andrews, K. Saravanamuttu, I. Vargas-Baca (McGill University, Canada); D. Dalacu, A. Brown, J.E. Klemberg-Sapieha, L. Martinu, M.R. Wertheimer, R. Sara, T. Touam, S.I. Najafi (Ecole Polytechnique, Canada) Nanocomposite thin films are material fabrics that contain hetero-inclusions much smaller than the wavelength of light. These inclusions may be selected to modify the optical properties of thin films making them attractive for passive and active device functions. This talk gives an overview of our recent research in nanocomposite thin films for photonics. The presentation will explore a range of glassy material composites that vary from the organic-rich at one extreme to those that are predominantly inorganic at the other extreme. In the former instance, we report on our recent findings regarding the linear and nonlinear optical response of plasma-deposited fluorocarbon media doped with noble metal nanoparticles. Unusual nonlinear optical field enhancements in the hyper-Rayleigh scattering from composites containing metal nanoparticles with surface-bound octopolar chromophores is linked to enhanced second harmonic generation from centrosymmetric composite media. New techniques for producing integrated optics devices such as compact Bragg gratings, multi-port star couplers and dense wavelength division multiplexers from hybrid organic-inorganic glasses will be described. The transition from hybrid sol-gel derived organic-inorganic glasses to homogeneous inorganic glasses for photonics is represented by examples drawn from our research in low temperature plasma-enhanced CVD processes for making optical thin films and integrated devices. |
2:10 PM |
C2-3 Fracture Toughness and Adhesion of Multilayers Intended for Optical Devices
J. Dijon (CEA, France); M. Ignat (CNRS-INPGrenoble, France); M. Poulingue (REOSC, France) The systems we investigated are multilayers intended for laser mirrors. They consist in a stack of thin layers of a couple of brittle materials with different refrective index, which are deposited alternatively. For these multilayers we have investigate their mechanical stability, when submitted to different sort of sollicitations. We have determined the critical parameters which activate the degradation of these systems. Eventhough the mechanical properties of the constitutive layers are rather similar (stiff materials, same order of magnitude of Young modulus), their mechanical response in the multilayer are rather different. As a matter of fact, a marked difference appears in the failure mechanims: some interfaces are less resistant than others. This behaviour is discussed with respect to the obtention conditions, and in particular with respect to the critical sizes of impurities, which act as nucleating sources of cracking and debonding. The determination of apparent values of strain energy release rates and fracture toughnesses is discussed. |
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2:30 PM |
C2-4 HfO2/SiO2 Stacks for High Power Laser Applications
B. Andre, G. Ravel (CEA, France) HfO2 is undoubtedly one of the most succesfull material for high power laser applications. However, the laser induced damage threshold of HfO2 coatings is usually limited due to molten oxide particles spewing out from the crucible during the evaporation process. These particles create burried nodular defects into the deposited material, known to be the ignitors of the coating damage during laser iradiation. To reach higher laser induced damage threshold, Hf has been evaporated and oxidized in situ thanks to reactive deposition or ion beam bombardment. The oxidation process parameters have to be carefully tuned to fulfill either high densification of the coating (as high as 99 % of the bulk) or low optical absorption (lower k = 3.10-6 at 350 nm). High laser induced damage thresholds are incompatible with energetic processes (ion beam bombardment). This general trend is discussed on either HfO2 coatings or HfO2/SiO2 stacks. A comparison with films deposited with the classical way (HfO2 evaporation) is proposed, especially concerning local absorptions induced by non stoichiometric nodular defects as determined with photothermal mapping and localized Auger spectroscopy. It gives clear indications on how injurious such defect could be for high laser flux applications. Thanks to this optimization, SiO2/HfO2 mirrors (99,5 % reflectivity) have been achieved which exhibit laser induced damage threshold at 1,06 µm as high as 45 J.cm-2. |
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2:50 PM |
C2-5 Optimising the Deposition Conditions for Reactively Pulsed Magnetron Sputtered Films
P.S. Henderson, P.J. Kelly, R.D. Arnell (University of Salford, United Kingdom) Recent developments in the design of unbalanced magnetrons now allow high ion currents to be drawn at the substrate (up to 20mA/cm2 in multiple magnetron systems). High ion currents have generally been found beneficial for the deposition of hard wear resistant coatings on tool steels, for example. However, such magnetrons may not necessarily produce the optimum deposition conditions for all types of coatings. Investigations have been carried out at Salford into the reactive pulsed magnetron sputtering of alumina films for use in optical applications. Two different designs of unbalanced magnetrons were used. The magnetrons were configured in the chamber in two different orientations. The use of these two variables allowed the ion current density at the substrate to be varied in the range 1 to 10mA/cm2. Other deposition parameters, such as pulse frequency, target reverse voltage and reverse time were also varied. Film properties, such as adhesion, wear resistance, transmission and reflectance were measured. These measurements showed significant variations in the film properties. Cosequently, the relationship between ion current and film properties has been investigated and the initial findings are reported here. |
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3:30 PM |
C2-7 Structural and Optical Properties of Titanium Oxide Thin Films Deposited by Filtered Arc Deposition
A. Bendavid, P.J. Martin, A. Jamting (CSIRO, Commonwealth Scientific Industrial and Research Organisation, Australia); H. Takikawa (Toyohashi University of Technology, Japan) Thin films of titanium oxide have been deposited on glass substrates, and conducting (100) silicon wafers by filtered arc deposition (FAD). The influence of the depositing Ti+ ion energy, substrate types and substrate temperature on the structure, surface morphology and optical properties have been investigated. The results of X-ray diffraction showed that with increasing substrate bias the film structure on silicon substrates changes from an anatase to rutile phase at room temperature, the transition occurring at a depositing particle energy of about 100 eV. The optical properties over the range of 300 nm to 800 nm were measured using spectroscopic ellipsometry and found to be strongly dependent on the substrate bias, oxygen partial pressure and substrate type. The refractive index values of the anatase and rutile films were measured to be 2.6 and 2.75 at a wavelength of 550 nm, respectively. The optical band gap as function of the substrate bias was also determined and was found to be 3.15 eV and 3.05 eV for anatase and rutile phases, respectively. Hardness and stress measurements also confirmed the structural transitions. The hardness range of TiO2 films was found to be between 10-21 GPa and the compressive stress was found to vary over 0.7-2.6 GPa. |
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3:50 PM |
C2-8 Composition Dependent Structural Properties of Pb1-xEuxSe Thin Films
P.C. Sharma (University of California, Los Angeles) The ternary compositional alloy Pb1-xEuxSe has received wide research attention as an attractive IR device material due to the possibility of tailoring its band gap through compositional changes to suit midinfrared range detection. The structural properties of these films grown by physical vapor deposition have been investigated using x-ray diffraction techniques. All the films, deposited over a composition range of x= 0.1 to 0.45, have been found to be polycrystalline with sharp diffraction peaks independent of growth conditions and compositions. The lattice parameter of the films calculated using the strongest (200) reflection has been found to increase with increasing europium content but not in accordance with Vegard's law. The grain sizes of the films have been found to be in the range of 100 -450Å with (200) as the preferred orientation for the grains. The dependence of grain size on the film composition and growth temperature has been studied in detail to understand the film nucleation and growth mechanisms on different substrates. Our findings have been found to be consistent with the trends observed in analogous material systems like Pb1-xEuxTe and Pb1-xYbxTe. |
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4:10 PM |
C2-9 The Development and Testing of Emissivity Enhancement Coatings for Thermophotovoltaic (TPV) Radiator Applications
B.V. Cockeram, A.J. Mueller (Bettis Atomic Power Laboratory) One purpose of a Thermophotovoltaic (TPV) radiator is to emit photons to cells for conversion to electric power. Since many candidate radiator materials with adequate structural properties display low emissivity, coatings or other surface modifications will be required for enhancement of emissivity. Coatings or other surface modifications using vacuum plasma spray (ZrO2 + 18% TiO2 +10%Y2O3, Cr2O3, ZrC, Fe2TiO5, ZrTiO4, ZrO2 + 8% Y2O3 + 2% HfO2, TiC, TiC +5% Al2O3 + 5% TiO2, ZrB2, ZrB2 + 10% MoSi2, and Al2O3 +TiO2), arc texturing (carbon and SiC electrodes), slurry fusion (SiO2 + C), and chemical vapor deposition (rhenium) have been evaluated as means of increasing emissivities of several structural alloys including refractory metals and nickel-base materials. Characterization and emissivity testing of these surfaces in the as-deposited condition and after a 500 hour vacuum anneal are used to evaluate these coatings. Results from thermal cycling tests are also presented. Promising attributes of modified surfaces are identified. |
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4:30 PM |
C2-10 Intense and Fast Photoluminescence from C+ -Implanted into SiO2 Films
J. Zhao, D.S. Mao, Z.X. Lin (Shanghai Institute of Metallurgy, Chinese Academy of Sciences, P.R. China); Y.H. Yu (Shanghai Institute of Metallurgy, Academia Sinica, P.R. China); G.Q. Yang, X.H. Liu (Shanghai Institute of Metallurgy, Chinese Academy of Sciences, P.R. China) Efficient light-emission from C+ -implanted SiO2 films is reported. C ions were implanted into PECVD SiO2 films using three different energies to corresponding doses in order to create a relatively uniform ion distribution in the films. The as-implanted samples were then annealed at 500-1000 degree C in a N2 atmosphere. The annealed samples show intense blue photoluminescence (PL) peaking at 450 nm, which can be observed by naked eyes at room temperature, accompanied by another UV peaks at 360-370 nm. Secondary ion mass spectroscopy (SIMS) and Fourier transform infrared (FTIR) spectra were used to characterized the C+ -implanted SiO2 films. The PL mechanisms are also discussed. |
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4:50 PM |
C2-11 Effect of Substrate on the Growth of LiNbO3 Epitaxial Film by Sol-Gel Procedure
H.H. Park, R.H. Kim (Yonsei University, KOREA); K.T. Joo (KIST, KOREA) LiNbO3has become a material of considerable interest because of its ferroelectric, electro-optic, and piezoelectric properties. Especially due to its excellent optical property, it can be used for waveguide material but only with its bulk crystalline form. Epitaxially grown LiNbO3film is desirable for its own application but high quality crystalline film is not obtainable yet. In this study, the influence of substrate to the crystallinity and microstructure of LiNbO3film were described. LiNbO3film based on a non-hydrolytic sol-gel route, was deposited on (0001) oriented LLiNbO3, (0001) LiTaO3, and (111) Si substrates. To investigate the effect of substrate orientation on the epitaxial growth of the film in detail, tilted Si (111) wafers with 0.5°, 1°, and 3°were specially prepared. After deposition and drying of the film, an amorphous film was obtained. During heat treatment followed by drying process, the amorphous structure changed into crystalline one. With (0001) LiNbO3and (0001) LiTaO3substrates, high quality epitaxial LiNbO3film could be obtained. The tilted (111) Si wafers showed slightly different crystalline quality of the films according to the variation in the tilting angle from <111> orientation. The crystallinity of the films was examined using X-ray diffractometer. The morphology was observed using scanning electron microscopy. The chemical bonding states were determined by X-ray photoelectron spectroscopy. |