GOX 2022 Monday Afternoon
Sessions | Time Periods | Topics | Schedule Overview
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| Session | Monday, August 8, 2022 | ||||||||||||||
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| 1:45 PM | 2:45 PM | 3:45 PM | 4:45 PM | ||||||||||||
| MD-MoA | 
                                 
                                    High Aspect Ratio Ga2O3-based Homo and H0eterostructures by Plasma-free Metal-assisted Chemical Etching
                                    
                                 
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                                    Blocking Behavior of N and Fe Ion Implanted β-Ga2O3
                                    
                                 
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                                    Evolution and Recovery of Ion Implantation-Induced Damage Zone in β-Ga2O3
                                    
                                 
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                                    Heterogeneous Integration of Single-Crystal β-Ga2O3 and N-Polar GaN Substrates With ZnO Interlayer Deposited by Atomic Layer Deposition
                                    
                                 
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                                    Structural Transformation of β-Ga2O3 through Si-implantation
                                    
                                 
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                                    Electrical Characteristics of in Situ Mg-Doped Ga2O3 Current-Blocking Layer for Vertical Devices
                                    
                                 
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                                 BREAK 
                                    
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| TM-MoA | 
                                 
                                    Transport, Doping, and Defects in β-Ga2O3
                                    
                                 
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                                    Structural Changes to Beta Gallium Oxide from Ion Irradiation Damage: Model and Relation to in-Situ Experiments
                                    
                                 
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                                    Band Structure Across κ-(InxGa1-x)2O3/κ-(AlyGa1-y)2O3 Thin Film Interfaces
                                    
                                 
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                                    Aluminum Incorporation Striations in (-201) β-(AlxGa1-x)2O3 Films Grown on C-Plane and Miscut Sapphire Substrates
                                    
                                 
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                                    Plasmon-phonon Coupling in Electrostatically Gated β-Ga2O3 Films with Mobility Exceeding 200 cm2V-1s-1
                                    
                                 
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