AVS2017 Session SP+2D+AS+NS+SS-MoA: Probing Electronic and Transport Properties

The emerging atomic layer materials offer a remarkably wide range of building blocks of nanostructures ranging from metals (e.g. graphene), large gap insulators (BN), to semiconductors (transition metal dichalcogenides and black phosphorous). Key advantages of these van der Waals materials include a broad span of energy gaps, flexibility of stacking different types of materials to form heterostructures, tunability in material properties by doping and strain, and the relative ease of integration with other electronic and photonic devices. This talk will be focused on the usage of scanning tunneling microscopy and spectroscopy to probe the atomic and electronic structure of transition metal dichalcogenides (TMDs) and their heterostructures, including both vertical and lateral structures.

I will first introduce a comprehensive form of scanning tunneling spectroscopy (STS) which allows us to probe not only the quasi-particle band gaps but also the critical point energy locations and their origins in the Brillouin Zone (BZ) can be revealed using this comprehensive form of STS. By using this new method, we reveal the systematic trend of the critical point energies for TMDs due to atomic orbital couplings, spin-orbital coupling and the interlayer coupling. By using the vertically stacked MoS2/WSe2, I will show how interlayer coupling can be used as a new designing parameter to create a lateral 2D electronic superlattices. I will then turn attention to MoS2/WSe2 lateral heterostructure where I will show a novel method to probe 2D strain tensor and how the strain changes the band profile as well as the band alignment at the interface.

Antiferromagnetic (AFM) tetragonal CuMnAs thin films have attracted great research interest recently, largely due to the capability of manipulating and detecting of their AFM states with ordinary electric current. Here we report a study on a CuMnAs thin film, grown epitaxially on GaP(001) substrates, using Spin-Polarized Scanning Tunneling Microscopy (SP-STM). An arsenic capping layer is used to protect the sample during transferring through the air which is able to be subsequently removed from the surface by thermal annealing. Atomic resolution STM topographic images of CuMnAs surface are achieved which shows an interesting surface reconstruction. Scanning tunneling spectroscopy (STS) is performed to explore the electronic structure of the thin film as well at the surface step edge. SP-STM study in combination with X-ray magnetic linear dichroism-photoelectron emission microscopic (XMLD-PEEM) measurements provides further understanding of the antiferromagnetic domain structure.

This research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy.

Conversion between the charge and the spin signal is a core technology for detection of many spin-related phenomena and for the realization of spintronic devices. Topological insulators are promising candidate for such purpose because of their surface states with non-trivial spin texture. The surface states electrons have the spin and the momentum locked to each other, so the electrical current can induce the uneven shift in the spin-dependent chemical potential for different spin directions. In this talk, we utilized spin-polarized four-probe scanning tunneling microscopy to probe the spin-dependent chemical potential of the topological insulators. Utilizing ferromagnetic tips and variable probe-spacing measurements, we detected non-vanishing spin-dependent chemical potential induced by the charge current. Various tip and surface conditions were tested to confirm its origin from the spin of charge carriers through the surface states. The result demonstrates the generation of excessive spins only by electrical means in topological insulators, which would become the critical component for the future spintronic applications.

This research was performed at the Center for Nanophase Materials Sciences which is a DOE Office of Science User Facility.

Low dimensional metallic structures, e.g. quantum wires and films on surfaces, reveal fascinating phenomena of condensed matter physics. Among others, 2D-superconductvity, formation of charge density waves and topologically protected edge states were realized lately with atomic precision and directly probed by electronic transport. Generally, the surface science approach benefits from the fact that the low dimensional systems can be comprehensively characterized and manipulated in view of their atomic structure and electronic bands. This is a prerequisite to understand electronic transport on the atomic scale.

In this talk I will introduce the technique of surface sensitive transport by means of 4-tip STM technique and highlight some recent examples of our group from seemingly different fields, e.g. spintronic, correlated materials and mesoscopic physics. The talk covers spin-orbit coupling related phase transitions in quasi 1D atomic wire structures (Au/Si(553), Pb/Si(557) [1,2]) as well as ballistic transmittance of electrons in epitaxially grown graphene nanostructures on SiC(0001) [3-5].

[1] C. Tegenkamp, et.al. PRL 109, 266401 (2012)

[2] C. Brand, et.al. , Nat. Comm. 6, 8118 (2015)

[3] J. Baringhaus ,et.al., Nature 506, 349 (2014)

[4] J. Baringhaus et.al. Sci. Rep. (Nature) 5, 9955 (2015)

In the trend of miniaturization of devices, electrical conductance through atomic-scale contacts is of significant importance for practical application of atom switch and single molecular devices. Because of unknown atomic geometry at the junction, however, the measured conductance often fluctuates. Here in this study we have studied the conductance properties of atomic superconducting point contact with precise control of contact geometry to investigate atomic details of conductance channel formation through it.

Using a low-temperature scanning tunneling microscopy (STM), we measured the conductance between the tip and sample surface from the tunneling to contact regimes [1]. By precisely positioning the tip on atomically specific sites of a sample surface such as on-top and hollow sites, site-specific conductance evolutions were obtained. We found using a Pb tip and Pb thin film as contact forming materials the conductance at point contact is larger at hollow site than at on-top site. Furthermore, it is found that the relation of the conductance measured is reversed just before the contact formation; at 20 pm away from the contact the conductance of the hollow site is smaller than the on-top site. These peculiar conductance behaviors can be explained by the attractive chemical force and subsequent conductance channel formation between the tip apex atom and surface atoms of the thin film.

Since the measurements were performed at low temperature (1.6 K) below the superconducting critical temperature of both materials, we obtained the evolution of the Josephson current and subharmonic in-gap structures due to multiple Andreev reflection (MAR) in the conductance spectra. From the analysis of the MAR structures, the complete set of transmission probability of conduction channels, which is often called personal identification number (PIN) of the junction as it determines all the coherent transport properties, was successfully extracted [2]. We found again site dependent evolution of transmission probabilities and the number of active conduction channels at the contact formation. We will discuss on the mechanism of channel formations based on comparison with the results of theoretical analysis.

References

[1] H. Kim and Y. Hasegawa, Phys Rev Lett 114, 206801 (2015)

[2] H. Kim, M. Kawamura, T. Kato, T. Ozaki, and Y. Hasegawa, in preparation.

The effect of magnetism and spin excitation in the Fe-based superconductors (FeSC) is crucial to understand their superconductivity. Both electron-(Ni) and hole-(Cr) dopant of magnetic elements could lead to suppression of the magnetic/structural phase transition in BaFe₂As₂. However, the Cr doped BaFe₂As₂ doesn’t show the superconductivity. Using scanning tunneling microscopy/spectroscopy, here, we compared the electronic properties of BaFe₂-xNixAs₂ and BaFe₂-xCrxAs₂ at various temperatures. Our results will shed the light on the microscopic understanding of relation between the superconductivity and magnetism in the FeSC. This research was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility.

Current-voltage (IV) curve acquisition is the oldest and most common spectroscopic method implemented on virtually every scanning probe microscope (SPM) available. Though in use for three decades, the basic measurement has not altered substantially in this time-frame, with the current being detected during DC pulses applied to the SPM tip. Such measurements include both a delay time after each DC voltage change (to reduce parasitic capacitance influence), as well as a an integration time, to reduce noise, limiting typical measurements to a few Hz at most. Here, we introduce a new method for IV curve acquisition, based on an AC-excitation of the SPM tip, in combination with full information acquisition from the current amplifier and Bayesian inference. IV curves are acquired on a model ferroelectric system, at rates ~500x faster than the current state of the art, with higher spatial and spectral resolution. The obtained results offer a complementary channel of information to supplement existing piezoresponse force microscopy studies, allowing to probe disorder at the nanoscale. Bayesian inference further allows quantification of the capacitance contribution, which can be utilized to estimate the dielectric constant of the ferroelectric, with results agreeing with reported values. These studies highlight the utility of both complete information acquisition, and Bayesian inference, in dramatically increasing the acquisition rates of data from SPM.

This research was sponsored by the Division of Materials Sciences and Engineering, BES, DOE (RKV, SVK, SS). This research was conducted and partially supported (SJ) at the Center for Nanophase Materials Sciences, which is a US DOE Office of Science User Facility. Bayesian inference portion was sponsored by the Applied Mathematics Division of ASCR, DOE; in particular under the ACUMEN project (KJHL, RA).