AVS2015 Session MN-ThM: Atomic Layer Nanostructures and 2D NEMS

Some of the most dramatic accomplishments with 2D materials have been enabled by properties that emerge only at the single or few-layer limit and are not found in bulk forms. Using and developing a variety of atomistic modeling methods, we have predicted that many of the commonly studied single-layer and few-layer transition metal dichalcogenide (TMD) materials (e.g. MoS₂) exhibit substantive electromechanical coupling in the form of piezoelectric and flexoelectric-like effects, unlike their bulk parent crystals.¹ I will describe the first recent observations of some of these effects in the laboratory by several research groups.

Single-layers of two-dimensional Mo- and W-dichalcogenide compounds differ from graphene in an important respect: they can potentially exist in more than one crystal structure. Some of these monolayers exhibit hints of a poorly understood structural metal-to-semiconductor transition with the possibility of long metastable lifetimes. If controllable, such a transition could bring an exciting new application space to monolayer materials. We have discovered that mechanical deformations provide a route to switching thermodynamic stability between a semiconducting and a metallic crystal structure in some of these monolayer materials.² Our DFT-based calculations reveal that single-layer MoTe₂ exhibits a phase boundary at a few percent tensile strain. The potential application space for this work ranges from information and energy storage to electronic and optical electronic devices.

¹Karel-Alexander N. Duerloo, Mitchell T. Ong, and Evan J. Reed, Journal of Physical Chemistry Letters 3 (19), 2871 (2012); Karel-Alexander N. Duerloo and Evan J. Reed, Nano Letters (4), 1681 (2013).

²Karel-Alexander Duerloo, Y. Li, and E. J. Reed, Nature Communications 5, 4214 (2014).

Keywords: Graphene Devices; Laser-Scribing; Wafer-scale; Transistors; Memory; Sensors and Actuators

Acknowledgments: This work was supported by National Natural Science Foundation (61434001), 973 Program (2015CB352100), National Key Project of Science and Technology (2011ZX02403-002) and Special Research Fund of Agricultural Science and Technology for Public Interest (201303107) of China.

Among recently emerged two-dimensional (2D) materials, hexagonal boron nitride (h-BN) possesses some unique properties, including a wide bandgap (5.9eV) [1] and electrical insulation, excellent thermal stability, and superb inertness [2]. It also has very high elastic modulus (E_Y ~810GPa) which is on the same order with that of graphene [3]. Similar to graphene, h-BN also has very high fracture strain limits [4] that are far beyond achievable values in conventional 3D crystals. In particular, h-BN offers piezoelectricity in an ultrathin 2D platform [5]. Therefore h-BN is an attractive structural material for 2D nanoelectromechanical systems (NEMS), especially as resonant transducers in harsh environment applications.

In this work, we describe the construction of h-BN drumhead structures and the first demonstration of vibrating h-BN 2D NEMS resonators. We investigate the elastic properties and resonant characteristics of such devices, by measuring flexural-mode resonances using ultrasensitive laser interferometry. We first fabricate circular drumhead h-BN resonators with thickness ranging from 9nm to 292nm and diameter of ~10μm using a completely dry transfer technique [6]. Then, by conducting both undriven and driven measurements on h-BN resonators, we observe and study the multimode resonances up to 7 modes, in high frequency (HF) and very high frequency (VHF) range. We further conduct spatially resolved measurements to attain the mode shapes of the multimode resonances. We then investigate the multimode frequency scaling of h-BN nanomechanical resonators with different thickness and analyze the experimental results to extract the elastic properties, structural and geometric effects. Finally, in comparison with the previously studied graphene and MoS₂ 2D NEMS resonators, we identify potential applications of these new h-BN devices in the 2D NEMS family.

[1] Y. Kubota, et al., Science 317, 932-934 (2007).

[2] A. Pakdel, et al., Chem. Soc. Rev. 43, 934-959 (2014).

[3] C. Lee, et al., Science 321, 385-388 (2008).

[4] L. Song, et al., Nano Lett. 10, 3209-3215 (2010).

[5] K.-A. Duerloo, et al., J. Phys. Chem. Lett. 3, 2871-2876 (2012).

[6] R. Yang, et al., J. Vac. Sci. & Tech. B 32, 061203 (2014).

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