Recently transparent semiconducting oxides are quite interesting due to their novel properties and intensive applications , for example, transparent flexible display and photovoltaics. Among them, zinc tin oxide is a typical amorphous semiconducting film which can be used as an active layer in the thin film transistor without any rare elements like In or Ga. For the practical reason, the solution process can be a promising way to extend these smart oxide materials into the everyday like applications. We applied a precursor-based solution process to make an amorphous semiconducting Zinc Tin Oxide film and combined UV-based post-treatment to enhance their physical and chemical properties at the moderate tempratures. The electrical, optical properties will be presented and explained on the physical and chemical analysis.

Indium-doped tin oxide (ITO) is the most popular transparent conductive electrodes (TCEs) used in flat screen displays and lighting technologies for decades. However, due to indium's limited supply and increasing cost, there has been a big push for many years to find alternatives or replacements of ITO (i.e., indium-free TCEs); many scientist and engineers have been working with zinc oxide and other metal-oxide materials but this area still remains quite challenging. Here we worked towards something different, developing new ways to give a current path between the TCEs using ordinary wide-bandgap materials and p-(Al)GaN layers via conducting filaments (CFs), which can be formed using electrical breakdown (or forming) processes, for ultraviolet light-emitting diodes (UV LEDs).

Transparent conductive oxides (TCO) on polymer substrates are prospected as a key material for next-generation devices such as flexible displays and photovoltaics. The advantages of polymer substrates include light-weight, low cost, a multiplicity of materials with tailored properties, shock absorption and highly flexibility. However, polymer substrates also have disadvantages such as low heat resistance and large thermal expansion coefficient compared with glass substrates. A main challenge for an efficient TCO on polymer substrate is not only to choose conductive oxide materials having capability of growing at low substrate temperature, but also to develop a deposition processes in order to obtain good electrical characteristics. Thus, in this study structural, electrical and optical properties of highly transparent conductive polycrystalline Ga-doped ZnO (GZO) and In, Ga-doped ZnO (IGZO) films deposited on plastic substrates at below 100 °C by magnetron sputtering were investigated. The dependences of crystal structure, electrical and optical properties of the GZO and IGZO films on plastic substrates have been systematically studied. The surfaces of plastic substrates and optically properties were controlled by coating buffer layers (CBLs).

The aim of this study is to investigate the effect of surface roughness of plastic substrates on characteristics of GZO and IGZO films of less than 150 nm thickness, such as structural and electrical characteristics. Then optically properties of GZO and IGZO films, for example transmittance, reflectance, yellow index, haze, a* and b* value, were depend on GZO and IGZO films thickness and CBLs. The GZO and IGZO films in the thicknesses range from 20 to 120 nm were prepared by magnetron sputtering. The resistivity and average transmittance in the visible wavelength region of GZO films of 120 nm thickness on plastic substrates were 1.0 x 10^-3 ohm·cm and more than 85 %, respectively.