ALD/ALE 2022 Wednesday Afternoon

Sessions | Time Periods | Topics | Schedule Overview

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Session Wednesday, June 29, 2022
1:30 PM 2:30 PM 3:30 PM 4:30 PM 5:30 PM
AA1-WeA
Effects of Ultra-thin Atomic Layer Deposited MgO Buffer Layer on Structural and Electrical Properties of Beo and HfO2 Films for Dynamic Random Access Memory Capacitors
Atomic Layer Deposition of Ternary Germanium-Sulfur-Selenium and Its Application for Ovonic Threshold Switching
Scaling Down to sub-5 nm Ferroelectric Hf0.5Zr0.5O2 Thin Films with Anhydrous H2O2 ALD Oxidant
Engineering the Ferroelectric Properties in Hafnium Oxide by Co-Doping during Atomic Layer Deposition
Magnetic and Electric Properties of Atomic Layer Deposited HfO2-Fe2O3 Thin Films
Atomic Layer Deposition of Antiferroelectric Perovskite Lead Hafnate Using O2-Gas-Only as the Oxygen Precursor
In-situ Half-Cycle Study of High Purity H2O2-based HfO2 Atomic Layer Deposition for Hf based Ferroelectric Devices Applications
AA2-WeA
Superconducting Tantalum Nitride Prepared by Plasma ALD With RF Biasing for Quantum Applications
Membrane Design by ALD for Hydrogen Purification
Mechanical Properties of ALD Coatings
AS1-WeA
Polystyrene Brush Deactivation Layers for Area Selective Atomic Layer Deposition
Area Selective Deposition of Ruthenium using a W Precursor Inhibitor
Electron-beam Functional Group Pattering on HOPG for Area-Selective Atomic Layer Deposition
Inhibitor Adsorption During Area-Selective ALD: Do Mixtures of Adsorption Configurations Lead to a Loss of Selectivity?
Area Selective Deposition for ZnO Hard Mask by 2D-like Carbon fabricated by Molecular Layer Deposition
Bifunctionality of Si Precursors to Enable Area Selective Deposition of Ru and Atomic Layer Deposition of SiO2
TiO2 Area-Selective Deposition: Using Selectivity Loss Mechanisms to Advance Applications in Nanopatterns and EUV Resist Materials
Break
AS2-WeA
Intrinsic Area-Selective Atomic Layer Deposition of Aluminium Nitride
Surface-Diffusion Control Enables Tailored-Aspect-Ratio Nanostructures in Area-Selective Atomic Layer Deposition
Study on Area-Selective Atomic Layer Deposition of Al2O3 with a Series of Al Precursors
Selective Hydration of TiO2 and In2O3: A Strategy for Site-Selective Atomic Layer Deposition at Surface Defects
Self-Assembled Monolayer and “Click” Chemistry Deposition Treatments for Area-Specific Processing
EM1-WeA
ALD of In1-XGaXN
Silicon-Based Polymer-Derived Ceramic Coatings by Post-Processing of Pre-Ceramic MLD Thin Films
Closing in on Room-Temperature Metal-Insulator-Transitions for Next Generation Electronics by Epitaxial Nickelate ALD
Plasma-Enhanced Atomic Layer Deposition of Spinel Ferrite CoFe2O4 and NiFe2O4 Thin Films
Engineering Maxwell-Wagner Polarization in Al2O3/TiO2/Al2O3 Nanolaminates Grown by Atomic Layer Deposition
Break
EM2-WeA
Vapor Phase Infiltration of Polymers for the Synthesis of Organic-Inorganic Hybrid Materials: Process Kinetics, Chemical Pathways, and Final Hybrid Structure
Atomic Layer Deposition on Polymer Thin Films: On the Role of Precursor Infiltration and Reactivity
Obtaining Robust Hydrophilic Surface on Soft Polymer Through Atmospheric Pressure ALD
Modified 3D Printed Architectures: Effects of Infiltration by Alumina on ABS
Polymer-Inorganic Hybrids for Inducing Self-Healing Functionality in Metal Oxides
Tailoring the Interfacial Interactions of Porous Polymer Membranes to Accelerate Atomic Layer Deposition: The Latent Path to Antifouling Membranes
Ruthenium Nanostructures via Sequential Infiltration Synthesis in Self-Assembled Diblock Copolymer Thin Films
Break
EM3-WeA
Photoactive Hybrid Materials by MLD
Cerium (III) based Hybrid Inorganic-Organic Thin Films by ALD/MLD
Modifying the Physico-Chemical Properties of Polymer Nanofiltration Membranes with Metal Oxide ALD
Modelling of the Growth of Al2O3-Based Hybrid Films: Role of Terminal Groups in Aromatic Molecules
Engineering Biomimetic Biocompatible and Selectively Antibacterial Ultrathin Films by Vapor Phase Chemistry
NS-WeA2
Controlled Encapsulation of Monolayer MoS2 with Ultrathin Aluminum Oxide for Low Resistance Tunnel Contact Formation
Synthesis of Crystalline Tungsten Disulfide Using Atomic Layer Deposition and Post-Deposition Sulfur Annealing
In-Situ-Prepared Protective Seed Layer by Plasma ALD on Graphene
Polycrystalline MoS2 Thin Films at 100 °C by Plasma-Enhanced Atomic Layer Deposition
Selectively Decorated Pt Nanoparticle on WS2 by Atomic Layer Deposition for High-Performance Gas Sensor
Closing Remarks and Thank Yous
Sessions | Time Periods | Topics | Schedule Overview