ALD/ALE 2021 Wednesday Morning

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Session	Wednesday, June 30, 2021
Session	9:30 AM					10:30 AM					11:30 AM					12:30 PM

LI-ALE-WeM3	Welcome, Thank Yous, & Instructions	Precise Atomic Layer Control of 2D MoS₂by ALE Technique for Device Applications	Structural and Compositional Evolution of SiN Surfaces Under Low Energy Ar⁺ Bombardment	Demonstration of Atomic-Layer-Etching of SiO₂ in a small-plasma-volume incorporating 162MHz CCP source and 27MHz substrate bias using CHF₃ and Ar/O₂	Vacuum Ultraviolet Enhanced Atomic Layer Etching of Metal Films		BREAK	Plasma ALE for Anisotropic and Isotropic Etching	Atomic Layer Etching of Gallium Nitride (Gan) Using SF₆/Ar Plasmas	Selective Atomic Layer Etching between GaN and SiN by Using HBr Neutral Beam		Study of Surface Damage Formation in Atomic Layer Etching of Si via Molecular Dynamics Simulation	BREAK	Patterning High Density STT-MRAM with a Novel Atomic Layer Etch Process	Exploring Thermal Ale for Spin-Torque Majority Gate Applications		Topographic Selective Deposition (TSD) by Combining Plasma Enhanced Atomic Layer Deposition and Atomic Layer Etching Processes	Surface Smoothing by Atomic Layer Deposition and Etching	In Situ Analysis on Atomic Layer Etching of Al₂O₃	Announcement of ALE and ALD Student Awardees, Closing Remarks & Thank Yous