ALD/ALE 2021 Tuesday Morning
Sessions | Time Periods | Topics | Schedule Overview
Hover over a paper or session to view details.
Click a Session in the first column to view session papers.
| Session | Tuesday, June 29, 2021 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 9:30 AM | 10:30 AM | 11:30 AM | 12:30 PM | 1:30 PM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LI-ALD-TuM1 |
Welcome, Thank Yous & Session Instructions
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Atomic Layer Deposition of Amorphous/Nanocrystalline Phase-Composite Nanolayers
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Density Functional Study on ALD Precursors for Hexagonal Boron Nitride Deposition
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A Novel co-Precursor Approach for Atomic Layer Deposition of Various Semiconductor Thin Films
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Tuneable YAlOx Protective Coatings Against Plasma Damage to Meet the Requirements in Future Semiconductor Fabrication Processes
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BREAK
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ALD of Boron Nitride by Polymer Derived Ceramics chemistry
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Process Parameter and Substrate Dependence of Sticking Coefficients in Atomic Layer Deposition Processes
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Volatile Cerium and Ytterbium Precursors for Atomic Layer Deposition: Synthesis, DFT and Application
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Predicting Precursor Volatility With Machine Learning
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Surface Chemistry of Deposition and Etch from First Principles Simulations
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BREAK
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Atomic Layer Deposition of Functional Dielectrics and Metals for the Emerging Non-Volatile Memories
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Crystallinity Control via Atomic Level Scaffolding
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Plasma-Enhanced Atomic Layer Deposition of Copper Oxide Semiconductors With Tunable Phase, Oxidation State, and Morphology for P-Type Thin Film Transistors
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Tuning Coercive Field and Polarization in Inherently Ferroelectric HZO Film Deposited Using HfD-04 and ZrD-04
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Ferroelectric Devices: From Applications to Microstructures
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Closing Remarks & Thank Yous
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