ALD2019 Wednesday Afternoon

Sessions | Time Periods | Topics | Schedule Overview

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Session Wednesday, July 24, 2019
1:30 PM 2:30 PM
AA1-WeA
Atomic Layer Deposited Nano-Coatings to Protect SrAl2O4 Based Long-Life Phosphors from Environmental Degradation
Enhanced Interfacial Fracture Toughness of Polymer-Epoxy Interfaces using ALD Surface Treatments
Atomic Layer Deposition of Pd on ZnO Nanorods for High Performance Photocatalysts
Accelerating Light Beam (ALB) Generation through Dielectric Optical Device Fabricated by Low Temperature Atomic Layer Deposition (ALD)
Tunable Plasmonic Colours Preserved and Modified by Atomic Layer Deposition of Alumina
TFE of OLED Displays by Time-Space-Divided (TSD) PE-ALD and PE-CVD Hybrid System
Tailoring the Ferroelectricity of ZrO2 Thin Films using Ultrathin Interfacial Layers Prepared by Plasma-Enhanced Atomic Layer Deposition
Spin-Hall-Active Platinum Thin Films Grown Via Atomic Layer Deposition
AA2-WeA
Silicon-Based Low k Dielectric Materials with Remote Plasma ALD
SiOC Films by PEALD with Excellent Conformality and Wet Etch Resistance
ALD TiN for Superconducting Through-Silicon Vias
Physical and Electronic Properties of Annealed ALD-deposited Ru from Ru(DMBD)(CO)3 and Oxygen
Fluorine Free Boron-Containing Composite Layers for Shallow Dopant Source Applications
Impact of Medium Energy Ions on the Microstructure and Physical Properties of TiN Thin Layers Grown by Plasma Enhanced Atomic Layer Deposition (PE-ALD).
ALD Process Monitoring for 3D Device Structures
EM1-WeA
Rhenium(III)-based Ternary Oxides: Novel Materials from Straightforward Synthesis via ALD Comprising Uncommon Reaction Pathways
Growth Bbehavior and Electronic Characterization of PbZrO3 and PbZrxTi1-xO3 Grown by Atomic Layer Deposition with Several Zr Precursors
Understanding Growth Characteristics of ALD NiAlyOx: The Role of Ozone
Atomic Layer Deposition of BxMg1-xO Films: Progress Towards Shallow Boron Doping
Enhanced Doping Control of Metal Oxide Thin Films Using a Modified ALD Process
As Deposited Epitaxial LaNiO3 and La(Ni,Cu)O3 with Controllable Electric Properties
Time Dependence of Pyroelectric Response in Ferroelectric Hf0.58Zr0.42O2 Films
Tailoring Nickel Oxide Conductivity by Introducing Transition Metals: From First-principles to Experimental Demonstration
NS-WeA
Modified ALD Process to Achieve Crystalline MoS2Thin Films
Nucleation and Growth of ALD MoS2 Films on Dielectric Surfaces
Plasma-Enhanced Atomic Layer Deposition of Transition Metal Dichalcogenides: From 2D Monolayers to 3D Vertical Nanofins
Atomic Layer Deposition of Emerging 2D Semiconductors HfS2 and ZrS2
Low Temperature ALD for Phase-controlled Synthesis of 2D Transition Metal (M=Ti, Nb) di- (MX2) and Tri- (MX3) Sulfides
ALD Boron Nitride Coated and Infiltrated Carbon Materials for Environmental Applications
Sessions | Time Periods | Topics | Schedule Overview